J. Osinski

发表

High-speed low-parasitic low-divergence 635 nm singlemode lasers

E. Vail, B. Lu, J. Osinski, 1998 .

Vapor levitation epitaxy reactor hydrodynamics

S. Hummel, H. Cox, J. Osinski, 1987 .

GaInP/AlGaInP 670 nm singlemode DBR laser

Thomas L Koch, B. Pezeshki, Atul Mathur, 1996 .

Threshold current analysis of compressive strain (0-1.8%) in low-threshold, long-wavelength quantum well lasers

P. Dapkus, P. Grodzinski, J. Osinski, 1993 .

Cross coupled cavity semiconductor laser

K. Cummings, R. Bhat, J. Salzman, 1988 .

Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

P. Dapkus, K. Dzurko, J. Osinski, 1989 .

Investigation of InxGa1−xAs/GaAs strained quantum well structures grown on non-planar substrates by MOCVD

P. Dapkus, P. Grodzinski, J. Osinski, 1991 .

Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurements

P. Dapkus, P. Grodzinski, W. Rideout, 1992, IEEE Photonics Technology Letters.

Comparative study of low-threshold 1.3 mu m strained and lattice-matched quantum-well lasers

P. Dapkus, P. Grodzinski, A. Mathur, 1993, IEEE Photonics Technology Letters.

Monolithic Semiconductor MOPAs: How the Watt Was Won

D. Welch, R. Lang, D. Mehuys, 1995 .

660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier

S. O'Brien, B. Pezeshki, Atul Mathur, 1997 .

Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

P. Dapkus, J. Osinski, Quan Chen, 1990 .

Photoluminescence study of critical thickness of pseudomorphic quantum wells grown on small area mesa stripes

P. Dapkus, P. Grodzinski, J. Osinski, 1991 .

High-power single-mode 2.0 mu m laser diodes

D. Nam, D. Welch, J. Major, 1993, IEEE Photonics Technology Letters.

660 nm angled grating DFB lasers

B. Pezeshki, S. Demars, J. Osinski, 1997, Conference Proceedings. LEOS '97. 10th Annual Meeting IEEE Lasers and Electro-Optics Society 1997 Annual Meeting.

Low-threshold quantum well lasers grown by metalorganic chemical vapor deposition on nonplanar substrates

P. Dapkus, K. Dzurko, J. Osinski, 1989 .

Evidence of gain enhancement in long wavelength strained quantum well laser diodes

P. Dapkus, P. Grodzinski, J. Osinski, 1991 .

Low Threshold 1.3/spl mu/m Strained and Lattice-Matched Quantum Well Lasers

P. Dapkus, P. Grodzinski, A. Mathur, 1992, Sixth International Conference Metalorganic Vapor Phase Epitaxy.

Low threshold 1.5 mu m quaternary quantum well lasers grown by MOCVD

P. Dapkus, P. Grodzinski, A. Mathur, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.

Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 mu m compressively strained semiconductor lasers

J. Schlafer, P. D. Dapkus, W. F. Sharfin, 1993 .

High power, diffraction limited laser diodes

D. Welch, R. Lang, D. Mehuys, 1993, Proceedings of LEOS '93.

Low threshold current 1.5- mu m buried heterostructure lasers using strained quaternary quantum wells

Y. Zou, P. Dapkus, A. Tanguay, 1992, IEEE Photonics Technology Letters.

Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells

Y. Zou, P. Dapkus, P. Grodzinski, 1992, IEEE Photonics Technology Letters.

Green, holmium-doped upconversion fibre laser pumped by red semiconductor laser

Bo Lu, James Gary Eden, D. S. Funk, 1997 .

Low-threshold diode-pumped operation of the holmium upconversion fiber laser

James Gary Eden, D. S. Funk, J. S. Osinski, 1998, Other Conferences.

High power 635 nm low-divergence ridge waveguide singlemode lasers

Robert J. Lang, Bo Lu, B. Pezeshki, 1998 .

400 mW continuous-wave diffraction limited flared unstable resonator laser diode at 635 nm

R. J. Lang, J. S. Osinski, R. Lang, 1997 .

Growth of InP related compounds on structured substrates for the fibrication of narrow stripe lasers

Y. Zou, P. Daniel Dapkus, J. S. Osinski, 1992 .

Effect of Auger recombination and differential gain on the temperature sensitivity of 1.5 μm quantum well lasers

P. D. Dapkus, W. F. Sharfin, Y. Zou, 1993 .

Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

P. Dapkus, J. Coleman, J. Osinski, 1991 .

Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

P. Dapkus, N. Frateschi, P.D. Dapkus, 1992, IEEE Photonics Technology Letters.

Optimization of stripe width for low-threshold operation of quantum well laser diodes

P. Dapkus, S. Hummel, K. Dzurko, 1990 .

Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets

C. Caneau, S. G. Menocal, T. P. Lee, 1987 .

Wide-Bandwidth and High-Power 1.3 µm InGaAsP Buried Crescent Lasers with Semi-Insulating Fe-doped InP Current Blocking Layers

C. Burrus, C. Zah, S. Menocal, 1987, Topical Meeting on Semiconductor Lasers.

Phased array of high‐power, coherent, monolithic flared amplifier master oscillator power amplifiers

David F. Welch, David G. Mehuys, Robert J. Lang, 1995 .

Quantum well lasers for optoelectronic integration grown by laser assisted atomic layer epitaxy

P. Dapkus, J. Osinski, Q. Chen, 1990, 12th IEEE International Conference on Semiconductor Laser.