F. Kobayashi

ERROR-FREE 2.5 GBIT/S OPERATION OF A SEMI-INSULATING BURIED HETEROSTRUCTURE SIDE-INJECTION LIGHT-CONTROLLED BISTABLE LASER DIODE

T. Kurokawa, C. Amano, T. Tadokoro, 1997 .

Amorphization Processes in Ion Implanted Si: Temperature Dependence

P. Fons, N. Natsuaki, T. Motooka, 1991 .

Investigation of Gas-Phase Reaction between Trimethylamine Alane and Triethylgallium in Chemical Beam Epitaxy

S. Iio, F. Kobayashi, Toru Kuwahara Toru Kuwahara, 1991 .

Direct time-domain optical demultiplexing of 10-Gb/s NRZ signals using side-injection light-controlled bistable laser diode

T. Kurokawa, C. Amano, T. Tadokoro, 1998, IEEE Photonics Technology Letters.

Regrowth of semi-insulating iron doped InP around crossed laser mesas by hydride vapor phase epitaxy

H. Mori, F. Kobayashi, T. Miyazawa, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Direct Optical Demux from 10 Gbit/s to 2.5 Gbit/s NRZ Signals Using a Side-Injection-Light-Controlled Bistable Laser Diode

T. Kurokawa, C. Amano, T. Tadokoro, 1997, Photonics in Switching.