A. Appelbaum

发表

Effect of zinc diffusion from overgrown p‐InP layers on semi‐insulating InP

W. Cheng, D. Renner, H. Kuwamoto, 1991 .

High-speed and low-relative-intensity noise 1.3 mu m InGaAsP semi-insulating buried crescent lasers

J. Bowers, W. Cheng, A. Mar, 1991 .

Subsurface cobalt diffusion in silicon single crystal from infinitesimally small cobalt diffusion source

S. Murarka, A. Appelbaum, D. Malm, 1987 .

A chemical and mechanistic view of reaction profiles in laser direct‐write metallization in metallo‐organic films. Gold.

M. E. Gross, A. Appelbaum, K. J. Schnoes, 1986 .

Excimer laser‐induced deposition of InP: Crystallographic and mechanistic studies

V. M. Donnelly, M. Geva, D. Brasen, 1985 .

Determination of diode parameters and threshold current from I-V measurements of InGaAsP/InP DFB DH lasers

K. Alavi, B. Kanack, C. Jiang, 1990, International Conference on Indium Phosphide and Related Materials.

Growth and characterization of Fe-doped semi-insulating InP prepared by low-pressure organometallic vapor phase epitaxy with tertiarybutylphosphine

D. Renner, A. Appelbaum, S. Zehr, 1991 .

High quality Fe‐doped semi‐insulating InP epitaxial layers grown by low‐pressure organometallic vapor phase epitaxy using tertiarybutylphosphine

D. Renner, A. Appelbaum, S. Zehr, 1991 .

Structure of sputtered Ni2P films

T. Boone, F. Schrey, S. Nakahara, 1987 .

VIA-7 sputter Ni-P as an ohmic contact to n-InP, p-InGaAs and as a diffusion barrier

F. Schrey, A. Appelbaum, M. Robbins, 1986, IEEE Transactions on Electron Devices.

Study of cobalt‐disilicide formation from cobalt monosilicide

S. Murarka, A. Appelbaum, R. Knoell, 1985 .

1.3 μm InGaAsP buried crescent lasers with cobalt‐doped semi‐insulating current blocking layers grown by metalorganic chemical vapor deposition

K. Hess, W. Cheng, D. Wolf, 1988 .

Characterization of Excimer Laser Deposited Gaas Films From the Photolysis of Trimethylgallium and Trimethylarsine At 193 nm

V. M. Donnelly, D. Brasen, R. Farrow, 1986 .

Laser direct‐write metallization in thin palladium acetate films

P. K. Gallagher, M. E. Gross, A. Appelbaum, 1987 .

Solid state reactions of TaW thin films and Si single crystals

M. Eizenberg, A. Appelbaum, R. Brener, 1983 .

Interactions of Thin Al Films with Ni–Cr Alloy and Bilayer Films Deposited on Si

M. Eizenberg, A. Appelbaum, R. Brener, 1986 .

Silicides formation for refractory metal alloys (Ta‐V and Ti‐V) on Si

M. Eizenberg, A. Appelbaum, 1984 .

Phase separation and layer sequence reversal during silicide formation with Ni-Cr alloys and Ni-Cr bilayers

M. Eizenberg, A. Appelbaum, R. Brener, 1984 .

Excimer laser induced deposition of InP

V. M. Donnelly, M. Geva, D. Brasen, 1986 .

ArF excimer‐laser‐stimulated growth of polycrystalline GaAs thin films

V. M. Donnelly, D. Brasen, W. Lowe, 1987 .

Metallurgical comparison of Au and Au:An:Au contacts on InGaAs, InGaAsP layers

A. Appelbaum, P. Thomas, 1989 .

Selective growth of InP on patterned, nonplanar InP substrates by low-pressure organometallic vapor phase epitaxy

D. Renner, A. Appelbaum, S. Zehr, 1990 .

High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling

Wood-Hi Cheng, Ami Appelbaum, D. Renner, 1989, Other Conferences.

Wide-band modulation of 1.3 mu m InGaAsP buried crescent lasers with iron- and cobalt-doped semi-insulating current blocking layers

Wood-Hi Cheng, S. W. Zehr, J. Pooladdej, 1989 .