S. Mukai

发表

Degradation and intensity fluctuations in CW AlGaAs double-heterostructure junction lasers

S. Gonda, S. Mukai, 1975 .

Effect of cavity size on lasting characteristics of a distributed Bragg reflector‐surface emitting laser with buried heterostructure

K. Mori, M. Ogura, S. Mukai, 1992 .

A semiconductor laser with a converging output beam

H. Yajima, S. Mukai, Masanobu Watanabe, 1985 .

Monolithic integration of a lens inside a diode‐laser cavity for beam convergence

H. Yajima, S. Mukai, Y. Takabe, 1985 .

Fabrication of buried‐heterostructure diode lasers using in situ Mg diffusion

H. Yajima, S. Mukai, Masanobu Watanabe, 1989 .

Buried-heterostructure diode lasers with in-situ-grown self-aligned GaAs mask for Zn diffusion

H. Yajima, S. Mukai, M. Watanabe, 1987 .

Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy

Y. Matsushima, S. Gonda, S. Mukai, 1978 .

AlGaAs/GaAs buried quantum well laser diodes by one time selective metalorganic chemical vapor deposition growth on dielectric window stripes

Z. Y. Chen, M. Ogura, H. Yajima, 1993 .

Very low‐threshold separate‐confinement‐heterostructure lasers prepared by liquid phase epitaxy

H. Yajima, S. Mukai, Y. Takabe, 1985 .

Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy

Y. Matsushima, S. Gonda, S. Mukai, 1975 .

Use of Multiple Pairs of Gain and Saturable Absorber Regions for Semiconductor Optical-Pulse Compressor

M. Shimizu, T. Hasama, S. Mukai, 2000 .

Optical tristability using a twin‐stripe laser diode

H. Yajima, S. Mukai, Masanobu Watanabe, 1987 .

Transverse beam deflection in a semiconductor laser

H. Yajima, S. Mukai, M. Watanabe, 1986 .

Analysis of intensity fluctuations in a junction laser with low quantum-efficiency regions

S. Gonda, S. Mukai, 1976, IEEE Journal of Quantum Electronics.

Integration of a diode laser and an electronic lens for controlling the beam focus position

H. Yajima, S. Mukai, H. Itoh, 1989 .

Coupled parallel waveguide semiconductor laser

A. Yariv, E. Kapon, S. Margalit, 1984 .

Mutual phase locking of a coupled laser diode‐Gunn diode pair

A. Yariv, S. Margalit, S. Mukai, 1984 .

Fundamental mode oscillation of a buried ridge waveguide laser array

A. Yariv, Shlomo Margalit, E. Kapon, 1984 .

Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAs

S. Mukai, 1983 .

Effect of structural disorder to photo-electron in pentanary alloy semiconductor AlGaInPAs

S. Emura, K. Koto, A. Yoshiasa, 1989 .

Ultraviolet absorption spectra of metalorganic molecules diluted in hydrogen gas

H. Yajima, S. Mukai, H. Itoh, 1988 .

Molecular Beam Epitaxial Growth of InP

Yuichi Matsushima, Morihiko Kimata, Seiji Mukai, 1976 .

Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs Substrates

H. Yajima, S. Mukai, J. Shimada, 1981 .

LPE Growth and Luminescence of In1-xGaxPyAs1-y on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eV

S. Mukai, J. Shimada, M. Matsuzaki, 1980 .

LPE Growth of In1-xGaxP1-zAsz (z ≦0.01) on (1 0 0) GaAs Substrates and Its Lattice Constants and Photoluminescence

S. Mukai, J. Shimada, M. Matsuzaki, 1981 .

Energy levels of nitrogen isoelectronic impurities in AlxGa1−xAs

H. Tanoue, S. Gonda, S. Mukai, 1976 .

Continuous Output Beam Steering in Vertical-Cavity Surface-Emitting Lasers with Two p-Type Electrodes by Controlling Injection Current Profile

Toshio Nemoto, Hiroyoshi Yajima, Masanobu Watanabe, 1999 .

Raman spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y

S. Emura, S. Gonda, S. Mukai, 1988 .

Doping and electrical properties of Mg in LPE AlxGa1−xAs

S. Gonda, S. Mukai, Y. Makita, 1979 .

Vertical field‐effect transistors in III‐V semiconductors

A. Yariv, E. Kapon, S. Margalit, 1984 .

A travelling-wave beam deflector cleave-coupled to a diode laser

Hiroyoshi Yajima, Masanobu Watanabe, Seiji Mukai, 1989 .

Beam scanning and switching characteristics of twin-striped lasers with a reduced stripe spacing

Hiroyoshi Yajima, Masanobu Watanabe, Seiji Mukai, 1985 .

Analysis of lateral-mode behavior of twin-stripe lasers related to the negative slope in their current-light characteristics

H. Yajima, S. Mukai, M. Watanabe, 1988 .

Influence of carrier spreading on the current‐controlled lateral‐mode behavior of twin‐stripe lasers

Hiroyoshi Yajima, Masanobu Watanabe, Hideo Itoh, 1990 .

Optical tristability and associated ternary digital functions using a twin-stripe laser diode

H. Yajima, S. Mukai, H. Itoh, 1988 .

Mechanism of the negative slope in the current‐light characteristics of twin‐stripe lasers

H. Yajima, S. Mukai, S. Uekusa, 1987 .

Analysis of mode behavior in a waveguide with graded index and gain

H. Yajima, S. Mukai, H. Yajima, 1984, IEEE Journal of Quantum Electronics.

Analysis of a double-heterostructure spatial-phase controller for diode-laser beam steering

H. Yajima, S. Mukai, M. Watanabe, 1988 .

Laser beam scanning using a local deflector integrated with an effective mode filter

Hiroyoshi Yajima, Masanobu Watanabe, Hideo Itoh, 1987 .

Transverse second‐order mode oscillations in a twin‐stripe laser with asymmetric injection currents

Hiroyoshi Yajima, Seiji Mukai, Shin-ichiro Uekusa, 1983 .

Optoelectronic fuzzy inference system based on beam-scanning architecture.

Hiroyoshi Yajima, Hideo Itoh, Seiji Mukai, 1994, Applied optics.

Vertical FET's in GaAs

A. Yariv, E. Kapon, S. Margalit, 1984, IEEE Electron Device Letters.

Continuously operated visible‐light‐emitting lasers using liquid‐phase‐epitaxial InGaPAs grown on GaAs substrates

Y. Mitsuhashi, H. Yajima, N. Kutsuwada, 1983 .

Surface Decomposition of GaAs Substrates in LPE Growth of InGaAsP and Its Effect on Crystal Quality

H. Yajima, S. Mukai, J. Shimada, 1981 .

LPE Growth and Luminescence of InGaAsP Lattice-Matched to (1, 0, 0) GaAs Substrates

S. Mukai, J. Shimada, 1980 .

Liquid phase epitaxial growth of AlGaInPAs lattice matched to GaAs

Y. Mitsuhashi, H. Yajima, N. Kutsuwada, 1984 .

Temperature dependence of photoluminescence spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y

S. Emura, H. Sumida, S. Gonda, 1988 .

Vibronically Allowed d-d Transitions of Cu2+ Centers in CdCl2 and CbBr2

S. Mukai, K. Kan’no, Y. Nakai, 1974 .

Optical absorption of Cu-centers in CdCl2 and CdBr2 single crystals

S. Mukai, S. Naoe, K. Kan’no, 1973 .

MOLECULAR BEAM EPITAXIAL GROWTH OF GaAs.

Yuichi Matsushima, Yunosuke Makita, Seiji Mukai, 1975 .

Influence of interstripe gain on crosscoupled-mode operation in twin-stripe lasers

H. Yajima, S. Mukai, M. Watanabe, 1993 .

An LPE Growth Method to Reduce Thermal Degradation of Substrates

A. Fujimoto, S. Gonda, S. Mukai, 1980 .