H. Lu

Intersubband photoconductivity at 1.6μm using a strain-compensated AlN∕GaN superlattice

Esther Baumann, Werner Schrenk, Gottfried Strasser, 2005 .

Anisotropy of the dielectric function for wurtzite InN

Oliver Ambacher, Volker Cimalla, Friedhelm Bechstedt, 2004 .

Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process

D.J. Chen, B. Liu, R. Zhang, 2009, IEEE Electron Device Letters.

Universality of electron accumulation at wurtzite c- and a-plane and zinc-blende InN surfaces

P. Schley, Frank Fuchs, Klaus Lischka, 2007 .

Ultrasensitive Detection of Phosphate Using Ion-Imprinted Polymer Functionalized AlInN/GaN High Electron Mobility Transistors

R. Zhang, H. Lu, H. Lu, 2016, IEEE Electron Device Letters.