W. F. Kopp

发表

Pseudomorphic InGaAs/AlGaAs modulation-doped FET's with reduced low-frequency noise and thermally stable performance

Hadis Morkoç, W. Kopp, H. Morkoç, 1987 .

Transport in modulation‐doped structures (AlxGa1−xAs/GaAs) and correlations with Monte Carlo calculations (GaAs)

Hadis Morkoç, T. J. Drummond, T. Drummond, 1982 .

Temperature dependence of current gain in AlGaAs/GaAs heterojunction bipolar transistors

Naresh Chand, Hadis Morkoç, R. Fischer, 1984 .

Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K

Michael S. Shur, Hadis Morkoç, T. J. Drummond, 1983 .

Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

Hadis Morkoç, Robert E. Thorne, A. Y. Cho, 1982 .

Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1982 .

High performance inverted and large current double interface modulation‐doped field‐effect transistors with the bulk (Al,Ga)As replaced by superlattice at the inverted interface

Hadis Morkoç, W. T. Masselink, R. Fischer, 1984 .

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Naresh Chand, Hadis Morkoç, R. Fischer, 1985 .

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)Si

Hadis Morkoç, R. Fischer, W. Kopp, 1986 .

Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature

Hadis Morkoç, R. Fischer, Paul D. Coleman, 1985 .

Monolithic integration of GaAs/AlGaAs modulation‐doped field‐effect transistors and N‐metal‐oxide‐semiconductor silicon circuits

Hadis Morkoç, J. Detry, R. Fischer, 1985 .

Ultra-low-noise cryogenic high-electron-mobility transistors

Luke F. Lester, M. W. Pospieszalski, P. M. Smith, 1988 .

4 GHz high-power high-efficiency pseudomorphic power HEMT

P. C. Chao, K.H.G. Duh, P. M. Smith, 1993, 1993 IEEE MTT-S International Microwave Symposium Digest.

32-GHz cryogenically cooled HEMT low-noise amplifiers

P. C. Chao, G. G. Ortiz, P. M. Smith, 1988 .

Mobility Enhancement in Inverted AlxGa1-xAs/GaAs Modulation Doped Structures and Its Dependence on Donor-Electron Separation

Hadis Morkoç, Robert E. Thorne, T. J. Drummond, 1981 .

A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequencies

Hadis Morkoç, Paul D. Coleman, D. G. Morgan, 1987 .