Yuki Niiyama

GaN Power Transistors on Si Substrates for Switching Applications

Yoshihiro Sato, Nariaki Ikeda, Yuki Niiyama, 2010, Proceedings of the IEEE.

Normally-Off Operation GaN Based MOSFETs for Power Electronics

Nariaki Ikeda, Yuki Niiyama, Hiroshi Kambayashi, 2009 .

Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2008 .

Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2008 .

Enhancement-mode GaN hybrid MOS-HFETs on Si substrates with Over 70 A operation

Yuki Niiyama, Hiroshi Kambayashi, T. Paul Chow, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

High‐quality SiO2/GaN interface for enhanced operation field‐effect transistor

Seikoh Yoshida, Yuki Niiyama, Hiroshi Kambayashi, 2007 .

Erratum for ‘Over 1500 V/2 A operation of GaN RESURF-MOSFETs on sapphire substrate’

Yuki Niiyama, Hiroshi Kambayashi, Sadahiro Kato, 2009 .

288 V-10 V DC- DC Converter Application Using AlGaN/GaN HFETs

Seikoh Yoshida, Nariaki Ikeda, Yuki Niiyama, 2008 .

Power factor correction circuit application using AlGaN/GaN HFETs

Seikoh Yoshida, Nariaki Ikeda, Yuki Niiyama, 2008 .

Over 1500 V/2A operation of GaN RESURF-MOSFETs on sapphire substrate

Yuki Niiyama, Hiroshi Kambayashi, Sadahiro Kato, 2009 .