Xu Li

InAs N-MOSFETs with record performance of Ion = 600 μA/μm at Ioff = 100 nA/μm (Vd = 0.5 V)

B. Duriez, I. Thayne, M. Passlack, 2013, 2013 IEEE International Electron Devices Meeting.

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium

Iain G. Thayne, Ali Z. Khokhar, Edward Wasige, 2010 .

Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Douglas J. Paul, Philippe Velha, Haiping Zhou, 2012 .