Lingjie Guo

发表

Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K

Y. Wang, Stephen Y. Chou, Effendi Leobandung, 1995 .

Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects

Stephen Y. Chou, Effendi Leobandung, Jian Gu, 1997 .

Formation of unintentional dots in small Si nanostructures

D. C. Tsui, Stephen Y. Chou, Leonid P. Rokhinson, 2000 .

Single hole quantum dot transistors in silicon

Stephen Y. Chou, Effendi Leobandung, S. Chou, 1995 .

A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel

Stephen Y. Chou, Effendi Leobandung, S. Chou, 1997 .

Fabrication and characterization of room temperature silicon single electron memory

Stephen Y. Chou, Effendi Leobandung, S. Chou, 1997 .

A Silicon Single-Electron Transistor Memory Operating at Room Temperature

Stephen Y. Chou, Effendi Leobandung, S. Chou, 1997, Science.

Silicon single-electron quantum-dot transistor switch operating at room temperature

Stephen Y. Chou, S. Chou, L. Guo, 1998 .

Nanoscale silicon field effect transistors fabricated using imprint lithography

Stephen Y. Chou, S. Chou, P. R. Krauss, 1997 .