E. V. K. Rao

Buried optical waveguides in fused silica by high−energy oxygen ion implantation

D. Moutonnet, E. V. K. Rao, D. Moutonnet, 1975 .

1.3 μm strain-compensated InAsP/InGaP electroabsorption modulator structure grown by atmospheric pressure metal–organic vapor epitaxy

Gilles Patriarche, Abdallah Ougazzaden, F. Devaux, 1997 .

Butt-coupled waveguide-modulators by low temperature embedded CBE regrowth for high speed modulation (42 GHz) or large extinction ratio (>50 db)

F. Huet, Abdallah Ougazzaden, F. Alexandre, 1997, Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.

Trimethylarsenic as an alternative to arsine in the metalorganic vapor phase epitaxy of device quality In0.53Ga0.47As/InP

A. Mircea, Abdallah Ougazzaden, C. Pautet, 1996 .

Long range disordering of GaAs‐AlGaAs multiquantum wells by isoelectronic antimony implants

Y. Gao, E. V. K. Rao, M. Juhel, 1993 .

Monolithic integration of strained layer multi-quantum well distributed feedback laser and external modulator by selective disordering

M. Carre, A. Ramdane, Abdallah Ougazzaden, 1994 .