T. Billon

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Observation of random telegraph signal in SiC Schottky diodes

T. Ouisse, H. Lahreche, T. Ouisse, 1997 .

The Ge condensation technique: A solution for planar SOI/GeOI co-integration for advanced CMOS technologies?

Yves Morand, Yves Campidelli, Sorin Cristoloveanu, 2008 .

Carbon-doped GeTe: A promising material for Phase-Change Memories

G. Reimbold, Sylvain Maitrejean, D. Blachier, 2011 .

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 IEEE International Memory Workshop.

N-doped GeTe as performance booster for embedded Phase-Change Memories

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 International Electron Devices Meeting.

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Marc Heyns, Marc Meuris, G. Raskin, 2005 .

Dual metallic source and drain integration on planar Single and Double Gate SOI CMOS down to 20nm: Performance and scalability assessment

O. Faynot, M. Vinet, D. Lafond, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).