B. Luo

发表

Characteristics of MgO/GaN gate-controlled metal–oxide– semiconductor diodes

Rishabh Mehandru, Stephen J. Pearton, Brent P. Gila, 2002 .

dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, Richard Wilkins, 2001 .

Band line-up and mechanisms of current flow in n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

Electrical and optical properties of hydrogen plasma treated n-AlGaN films grown by hydride vapor phase epitaxy

John M. Zavada, Stephen J. Pearton, A. V. Govorkov, 2004 .

Comparison of ohmic contact properties on n-GaN/p-SiC and n-AlGaN/p-SiC heterojunctions

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .

AlGaN/GaN HEMT based liquid sensors

Guan-Ting Chen, Rishabh Mehandru, Stephen J. Pearton, 2004 .

Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO

David C. Look, David P. Norton, John M. Zavada, 2003 .

Fabrication and characteristics of high speed implant-confined, index-guided, lateral-current, 850 nm vertical cavity surface emitting lasers

Rishabh Mehandru, Stephen J. Pearton, W. S. Hobson, 2002, Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.02TH8611).

Gd2O3/GaN metal-oxide-semiconductor field-effect transistor

S. J. Pearton, Brent P. Gila, Tzer-En Nee, 2000 .

Gadolinium Oxide and Scandium Oxide: Gate Dielectrics for GaN MOSFETs

Rishabh Mehandru, Stephen J. Pearton, S. Bates, 2001 .

Vertical and lateral GaN rectifiers on free-standing GaN substrates

S. S. Park, Stephen J. Pearton, Yong Jo Park, 2001 .

Influence of 60Co γ-rays on dc performance of AlGaN/GaN high electron mobility transistors

Amir Dabiran, Albert G. Baca, S. J. Pearton, 2002 .

Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

David P. Norton, John M. Zavada, Stephen J. Pearton, 2003 .

Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Fabrication and characteristics of high-speed implant-confined index-guided lateral-current 850-nm vertical cavity surface-emitting lasers

Rishabh Mehandru, Stephen J. Pearton, W. S. Hobson, 2003 .

Influence of MgO and Sc2O3 passivation on AlGaN/GaN high-electron-mobility transistors

Rishabh Mehandru, C. Monier, Albert G. Baca, 2002 .

Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire

Joel R. Wendt, C. Monier, Albert G. Baca, 2002 .

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Albert G. Baca, S. J. Pearton, T. Jenkins, 2003 .

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Richard Wilkins, S. J. Pearton, Brent P. Gila, 2003 .

Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

Rishabh Mehandru, Andrei Osinsky, Stephen J. Pearton, 2002 .