Bui Van Pho

High-Resolution TEM Observation of 4H-SiC (0001) Surface Planarized by Catalyst-Referred Etching

Kazuto Yamauchi, Kenta Arima, Ryusuke Sagawa, 2012 .

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

Kazuto Yamauchi, Kenta Arima, Keita Yagi, 2012 .

Improvement of Removal Rate in Abrasive-Free Planarization of 4H-SiC Substrates Using Catalytic Platinum and Hydrofluoric Acid

T. Okamoto, Y. Sano, K. Yamauchi, 2012 .

First-Principles Analysis of Dissociative Absorption of HF Molecule at SiC Surface Step Edge

K. Yamauchi, K. Inagaki, Y. Morikawa, 2012 .

Surface Observation of 4H-SiC (0001) Planarized by Catalyst-Referred Etching

T. Okamoto, Y. Sano, K. Yamauchi, 2012 .