Bennett Charles Larson

Nanosecond resolution time-resolved x-ray study of silicon during pulsed-laser irradiation

Jonathan Zachary Tischler, D. M. Mills, J. Tischler, 1986 .

Time‐resolved x‐ray diffraction measurement of the temperature and temperature gradients in silicon during pulsed laser annealing

D. M. Mills, C. W. White, D. Mills, 1983 .

White microbeam diffraction from distorted crystals

Wenge Yang, Gene E. Ice, George M. Pharr, 2001 .

Interface Temperatures and Temperature Gradients in Silicon During Pulsed Laser Irradiation

Jonathan Zachary Tischler, D. M. Mills, J. Tischler, 1988 .

Synchrotron x-ray diffraction study of silicon during pulsed laser annealing

D. M. Mills, C. W. White, D. Mills, 1982 .

Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Stephen J. Pennycook, R. A. Zuhr, Bill R. Appleton, 1987 .