G. Hobler

Simulation of Phosphorus Diffusion in Silicon Using a Pair Diffusion Model with a Reduced Number of Parameters

Kamran Ghaderi, G. Hobler, 1995 .

Model for the electronic stopping of channeled ions in silicon around the stopping power maximum

Lothar Frey, Heiner Ryssel, G. Hobler, 1995 .

Modeling of ultra-low energy boron implantation in silicon

A. Agarwal, H.-H. Vuong, J. Bevk, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Rta-simulations With the 2-d Process Simulator Promis

S. Selberherr, H. Potzl, S. Selberherr, 1990, Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits.

Comparison of Transmission Electron Microscope Cross Sections of Amorphous Regions in Ion Implanted Silicon with Point‐Defect Density Calculations

H. Cerva, G. Hobler, H. Cerva, 1992 .