N. Dheilly

发表

Graded Etched Junction Termination for SiC Thyristors

R. D. De Doncker, D. Planson, S. Scharnholz, 2011 .

Extreme dielectric strength in boron doped homoepitaxial diamond

F. Omnès, D. Planson, P. Brosselard, 2010 .

Optical beam induced current measurements: principles and applications to SiC device characterization

D. Planson, D. Tournier, P. Brosselard, 2009 .

High breakdown voltage Schottky diodes synthesized on p‐type CVD diamond layer

F. Omnès, D. Planson, P. Brosselard, 2010 .

Comparison of SiC Thyristors with Differently Etched JTEs

R. D. De Doncker, D. Planson, S. Scharnholz, 2012 .

Avalanche Diodes with Low Temperature Dependence in 4H-SiC Suitable for Parallel Protection

D. Planson, D. Tournier, S. Scharnholz, 2011 .

Light triggered 4H–SiC thyristors with an etched guard ring assisted JTE

D. Planson, S. Scharnholz, G. Pâques, 2012 .

OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

D. Planson, D. Tournier, S. Scharnholz, 2012 .

Experimental determination of impact ionization coefficients in 4H-SiC

D. Planson, D. Tournier, P. Brosselard, 2011 .

Optical beam induced current measurements: principles and applications to SiC device characterization

D. Planson, D. Tournier, P. Brosselard, 2009 .