D. V. van Dorp

发表

Record GmSAT/SSSAT and PBTI Reliability in Si-Passivated Ge nFinFETs by Improved Gate-Stack Surface Preparation

K. Wostyn, H. Dekkers, D. Mocuta, 2019, IEEE Transactions on Electron Devices.

Atomic-scale investigations on the wet etching kinetics of Ge versus SiGe in acidic H2O2 solutions: a post operando synchrotron XPS analysis

H. Bender, S. De Gendt, M. Lebedev, 2020 .

Visualizing anisotropy in the surface oxidation of germanium by wet etching of patterned nanowedges: proof of concept.

M. Lebedev, W. Calvet, T. Mayer, 2019, Chemical communications.

Scaled-Down c-Si and c-SiGe Wagon-Wheels for the Visualization of the Anisotropy and Selectivity of Wet-Chemical Etchants

H. Philipsen, F. Holsteyns, A. Pacco, 2019, Nanoscale Research Letters.

Chemical Etching of GaN in KOH Solution: Role of Surface Polarity and Prior Photoetching

T. Conard, J. Weyher, J. Kelly, 2022, The Journal of Physical Chemistry C.

SiC: a photocathode for water splitting and hydrogen storage.

M. Di Vece, J. Kelly, D. V. van Dorp, 2009, Angewandte Chemie.

Wet Chemical Processing of Ge in Acidic H2O2 Solution: Nanoscale Etching and Surface Chemistry

S. De Gendt, M. Lebedev, M. Fingerle, 2020 .

Surface Chemistry and Nanoscale Wet Etching of Group IV Semiconductors in Acidic H2O2 Solutions

S. De Gendt, M. Lebedev, T. Mayer, 2021 .

Wet-chemical bromination of Ge (100): A facile surface passivation tool

M. Lebedev, M. Fingerle, D. V. van Dorp, 2018, Applied Physics Letters.

Anodic etching of SiC in alkaline solutions

J. Weyher, J. Kelly, D. V. van Dorp, 2007 .

Watermark Formation on Bare Silicon: Impact of Illumination and Substrate Doping

M. Heyns, H. Philipsen, S. De Gendt, 2014 .

Photoanodic oxidation of InP in acid solution and its surface chemistry: On the interplay of photons, protons and hydrodynamics

T. Conard, J. Meersschaut, J. Kelly, 2020 .

Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation

O. Richard, T. Ivanov, C. Adelmann, 2019, ACS Applied Electronic Materials.

Cleaning of III-V Materials: Surface Chemistry Considerations

S. De Gendt, P. Mertens, D. V. van Dorp, 2012 .

Photoanodic pyramid texturization of n-Ge(100) in HCl solution: unexpected anisotropy in the surface chemistry of etching

S. De Gendt, M. Lebedev, A. Hajduk, 2019, Journal of Materials Chemistry C.

A synchrotron radiation photoelectron spectroscopy study on atomic-scale wet etching of InAs (111)-A and (111)-B in acidic peroxide solutions: surface chemistry versus kinetics

S. De Gendt, M. Lebedev, M. Fingerle, 2022, Materials Today Chemistry.

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A record GmSAT/SSSAT and PBTI reliability in Si-passivated Ge nFinFETs by improved gate stack surface preparation

K. Wostyn, D. Mocuta, N. Horiguchi, 2019, 2019 Symposium on VLSI Technology.

Scalability of InGaAs gate-all-around FET integrated on 300mm Si platform: Demonstration of channel width down to 7nm and Lg down to 36nm

C. Merckling, N. Waldron, N. Collaert, 2016, 2016 IEEE Symposium on VLSI Technology.

Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies

A. Vais, N. Collaert, N. Horiguchi, 2019, Advanced Lithography.

Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

A. Vais, C. Merckling, N. Waldron, 2015, 2015 IEEE International Electron Devices Meeting (IEDM).

Unexpected Pyramid Texturization of n-Type Ge (100) via Electrochemical Etching: Bridging Surface Chemistry and Morphology

S. De Gendt, M. Lebedev, A. Hajduk, 2018, Solid State Phenomena.