A. Pourghaderi

Suitability of high-k gate oxides for III–V devices: A PBTI study in In0.53Ga0.47As devices with Al2O3

B. Kaczer, D. Lin, N. Waldron, 2014, 2014 IEEE International Reliability Physics Symposium.

Germanium Deep-Submicron p -FET and n -FET Devices, Fabricated on Germanium-On-Insulator Substrates

K. Opsomer, B. Kaczer, A. Satta, 2007 .

InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

Niamh Waldron, Nadine Collaert, Farid Sebaai, 2014, IEEE Electron Device Letters.

An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates

C. Merckling, D. Lin, N. Waldron, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.