L. T. Tung

发表

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Wilman Tsai, Tzu-Ying Lin, C. P. Chen, 2008 .

Metal-oxide-semiconductor devices with molecular beam epitaxy-grown Y2O3 on Ge

Yu-Cheng Chang, Y. J. Lee, L. K. Chu, 2009 .

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

J. M. Hong, J. Kwo, C. Tsai, 2008 .

Growth and structural characteristics of GaN∕AlN/nanothick γ-Al2O3∕Si (111)

Y. J. Lee, C. H. Lee, J. Kwo, 2008 .

Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As

Y. J. Lee, J. Kwo, Y. H. Chang, 2008 .

Oxide scalability in Al2O3∕Ga2O3(Gd2O3)∕In0.20Ga0.80As∕GaAs heterostructures

Y. J. Lee, J. Kwo, M. Hong, 2008 .

Photoluminescence and Raman studies of GaN films grown by MOCVD

E Y Chang, E. Chang, L. T. Tung, 2009 .

Molecular beam epitaxy-grown Al2O3/HfO2 high-κ dielectrics for germanium

Y. J. Lee, J. Kwo, M. Hong, 2009 .

Molecular beam epitaxy grown Ga2O3(Gd2O3) high κ dielectrics for germanium passivation-x-ray photoelectron spectroscopy and electrical characteristics

C. H. Lee, J. Kwo, M. Hong, 2008 .

1nm equivalent oxide thickness in Ga2O3(Gd2O3)∕In0.2Ga0.8As metal-oxide-semiconductor capacitors

J. Kwo, M. Hong, W. Tsai, 2008 .