R. Morris

发表

Diffusion of boron in germanium at 800–900°C

N. Cowern, A. Willoughby, M. Dowsett, 2004 .

Ultra-high hole mobility exceeding one million in a strained germanium quantum well

M. Myronov, D. Leadley, E. Parker, 2012 .

Anisotropy in the hole mobility measured along the [110] and [1̄10] orientations in a strained Ge quantum well

M. Myronov, D. Leadley, R. Beanland, 2014 .

High-quality Ge/Si0.4Ge0.6multiple quantum wells for photonic applications : growth by reduced pressure chemical vapour deposition and structural characteristics

M. Myronov, D. Leadley, A. Dobbie, 2011 .

An Electrode Design Rule for Organic Photovoltaics Elucidated Using Molecular Nanolayers

R. Hatton, Oliver S. Hutter, R. Morris, 2011 .

Accurate ultra-low-energy secondary ion mass spectrometry analysis of wide bandgap GaN/In(x)Ga(1-x)N structures using optical conductivity enhancement.

P. Parbrook, R. Beanland, M. Dowsett, 2010, Rapid communications in mass spectrometry : RCM.

Si1-xGex/Si Interface Profiles Measured to Sub-Nanometer Precision Using uleSIMS Energy Sequencing

G. Rowlands, T. Hase, A. M. Sanchez, 2016, Journal of The American Society for Mass Spectrometry.

Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structures.

M. Myronov, D. Leadley, R. Beanland, 2012, Analytical chemistry.

The use of low‐energy SIMS (LE‐SIMS) for nanoscale fuel cell material development

J. Perkins, C. Rouleau, J. Kilner, 2011 .

Influence of Oxygen Plasma on the Growth, Structure, Morphology, and Electro-Optical Properties of p-Type Transparent Conducting CuBr Thin Films

P. McNally, R. Vijayaraghavan, S. Daniels, 2014 .

Different optical conductivity enhancement (OCE) protocols to eliminate charging during ultra low energy SIMS profiling of semiconductor and semi-insulating materials

M. Dowsett, R. Morris, R. Chang, 2006 .

O2+ probe‐sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells

M. Myronov, D. Leadley, R. Beanland, 2013 .

Low energy SIMS characterization of passive oxide films formed on a low-nickel stainless steel in alkaline media

D. Mcphail, M. Ryan, J. Bastidas, 2014 .

Sodium and hydrogen analysis of room temperature glass corrosion using low energy Cs SIMS

D. Mcphail, S. Fearn, M. Dowsett, 2006 .

Depth Profiling and Melting of Nanoparticles in Secondary Ion Mass Spectrometry (SIMS)

M. Seah, M. Dowsett, K. Sparnacci, 2013 .

Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAs.

W. Vandervorst, P. Ferrari, J. Bogdanowicz, 2019, Ultramicroscopy.

Ultra-High Hall Mobility (1 x 106 cm2V-1S-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD

M. Myronov, D. Leadley, T. Whall, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Surface enhancement of oxygen exchange and diffusion in the ionic conductor La2Mo2O9

Jingjing Liu, R. Chater, S. Skinner, 2010 .

Oxygen surface exchange and diffusion studies of La2Mo2O9 in different exchange atmospheres

Jingjing Liu, R. Chater, S. Skinner, 2011 .

A silicon 〈111〉 phase retarder for producing circularly polarized x-rays in the 2.1-3 keV energy range

L. Bouchenoire, T. Hase, R. Morris, 2012 .

Comparison of electron–phonon and hole–phonon energy loss rates in silicon

M. Prunnila, M. Myronov, D. Leadley, 2015 .

Hole-phonon energy loss rate in boron doped silicon

M. Prunnila, M. Myronov, D. Leadley, 2013, 2013 14th International Conference on Ultimate Integration on Silicon (ULIS).

Strain enhanced electron cooling in a degenerately doped semiconductor

M. Prunnila, J. Muhonen, M. Myronov, 2011, 1111.0465.

Alternative method of using an electron beam for charge compensation during ultralow energy secondary-ion-mass spectroscopy experiments

M. Dowsett, R. Morris, B. Mata, 2006 .

Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantification.

W. Vandervorst, R. Morris, P. van der Heide, 2019, Ultramicroscopy.

Wet-chemical etching of atom probe tips for artefact free analyses of nanoscaled semiconductor structures.

W. Vandervorst, J. Bogdanowicz, C. Fleischmann, 2018, Ultramicroscopy.

Ultra low energy O2+ SIMS depth profiling of superficial poly(CuPc) and Co(II)T(o‐NH2)PP monomolecular layers

N. Wilson, A. Adriaens, R. Morris, 2013 .

The influence of beam energy on apparent layer thickness using ultralow energy O2+ SIMS on surface Si1−xGex

R. Beanland, R. Morris, M. Hand, 2011 .

Growth and electrical characterisation of δ-doped boron layers on (111) diamond surfaces

Hiroshi Kawarada, Syunsuke Sato, Richard B. Jackman, 2012 .

An O2+ probe energy study for boron quantification in Si1−xGex (0 ≤ x ≤ 1) using secondary ion mass spectrometry

R. Morris, 2016 .

Ion yields and erosion rates for Si1−xGex(0≤x≤1) ultralow energy O2+ secondary ion mass spectrometry in the energy range of 0.25–1 keV

M. Dowsett, R. Morris, 2009 .

The use of ultra-low-energy dynamic SIMS in the study of the tarnishing of silver

M. Dowsett, A. Adriaens, R. Morris, 2005 .

Spatial determination of gold catalyst residue used in the production of ZnO nanowires by SIMS depth profiling analysis

K. Teo, R. Morris, D. L. Baptista, 2007 .

Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy

R. Hammond, D. Leadley, E. Parker, 2004 .

Technique for producing highly planar Si/SiO0.64Ge0.36/Si metal–oxide–semiconductor field effect transistor channels

A. Knights, G. Braithwaite, R. Hammond, 1999 .

Molecular-beam epitaxy and lattice parameter of GaNxSb1−x: deviation from Vegard's law for x > 0.02

P. Thomas, T. Jones, T. Veal, 2013 .

Anomalous Oxidation States in Multilayers for Fuel Cell Applications

H. Fraser, J. Perkins, H. Christen, 2010 .

Electrical properties and strain distribution of Ge suspended structures

C. M. Torres, M. Myronov, D. Leadley, 2015 .

XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded buffers grown by hybrid epitaxy on Si(001) substrates

E. Parker, N. Barradas, N. Franco, 2005 .

An origin behind Rashba spin splitting within inverted doped sGe heterostructures

D. Leadley, A. Dobbie, O. Mironov, 2017 .

Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants.

S. M. Durbin, M. Dowsett, W. Linhart, 2012, Physical review letters.

Ion-implantation and diffusion behaviour of boron in germanium

N. Cowern, A. Evans, A. Willoughby, 2001 .

Relaxation of strained silicon on Si 0.5 Ge 0.5 virtual substrates

D. Leadley, E. Parker, R. Morris, 2008 .

Toward accurate composition analysis of GaN and AlGaN using atom probe tomography

W. Vandervorst, L. Arnoldi, P. Heide, 2018 .

MBE growth and characterization of Mn-doped InN

S. M. Durbin, M. Dowsett, W. Linhart, 2012 .

Magnetotransport studies of SiGe-based p-type heterostructures: Problems with the determination of effective mass

V. Andrievskii, D. Leadley, O. Mironov, 2012 .

RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications

E. Parker, E. Alves, N. Barradas, 2006 .