T. Cerba

Spatially correlated structural and optical characterization of a single InGaAs quantum well fin selectively grown on Si by microscopy and cathodoluminescence techniques

Mickael Martin, T. Baron, N. Rochat, 2016 .

Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001)

D. Caliste, X. Bao, Y. Bogumilowicz, 2016, 1701.08078.

InAs/GaSb thin layers directly grown on nominal (0 0 1)-Si substrate by MOVPE for the fabrication of InAs FINFET

G. Patriarche, Mickael Martin, T. Baron, 2019, Journal of Crystal Growth.

Nanoindentation effects on the electrical caracterizaron in Ψ-MOSFET configuration

S. Cristoloveanu, C. Delacour, M. Bawedin, 2018, 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS).

Suppression of self-organized surface nanopatterning on GaSb/InAs multilayers induced by low energy oxygen ion bombardment by using simultaneously sample rotation and oxygen flooding

Mickael Martin, T. Baron, J. Barnes, 2018 .

Midwave infrared barrier detector based on Ga-free InAs/InAsSb type-II superlattice grown by molecular beam epitaxy on Si substrate

Laurent Cerutti, Eric Tournié, Q. Durlin, 2019, Infrared Physics & Technology.

Low temperature growth and physical properties of InAs thin films grown on Si, GaAs and In0.53Ga0.47As template

Y. Bogumilowicz, F. Ducroquet, Mickael Martin, 2018 .

Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition

Y. Bogumilowicz, Mickael Martin, T. Baron, 2018 .