Sanghoon Lee

High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer

M. Rodwell, A. Gossard, S. Stemmer, 2013 .

Substitutional-Gate MOSFETs With Composite $( \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}/\hbox{InAs}/\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As})$ Channels and Self-Aligned MBE Source–Drain Regrowth

M. J. W. Rodwell, A. C. Gossard, M. Rodwell, 2012, IEEE Electron Device Letters.

Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistance

M. Rodwell, A. Gossard, Hong Lu, 2013 .

High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching

M. Rodwell, A. Gossard, V. Chobpattana, 2013, 2013 International Conference on Indium Phosphide and Related Materials (IPRM).

Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls

L. Coldren, S. Denbaars, M. Rodwell, 2014 .

Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers

M. Rodwell, A. Gossard, V. Chobpattana, 2013 .

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting $I_{{\scriptstyle {\rm ON}}}=482~\mu{\rm A}/\mu{\rm m}$ at $I_{{\scriptstyle {\rm OFF}}}=100~{\rm nA}/\mu{\rm m}$ and $V_{\rm DD}=0.5~{\rm V}$

M. Rodwell, A. Gossard, V. Chobpattana, 2014, IEEE Electron Device Letters.

Highly Scalable Raised Source/Drain InAs Quantum Well MOSFETs Exhibiting I ON = 482 μA/μm at I OFF = 100 nA/μ ma ndV DD = 0. 5V

M. Rodwell, A. Gossard, V. Chobpattana, 2014 .

(Invited) Record-Performance In(Ga)As MOSFETS Targeting ITRS High-Performance and Low-Power Logic

Mark J. W. Rodwell, Sanghoon Lee, William J. Mitchell, 2015 .

Ultrathin InAs-channel MOSFETs on Si substrates

M. Rodwell, A. Gossard, V. Chobpattana, 2015, International Symposium on VLSI Technology, Systems, and Applications.