S.R. Omampuliyur

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

S.C. Rustagi, S.H.G. Teo, N. Balasubramanian, 2007, IEEE Electron Device Letters.

Ultra-Narrow Silicon Nanowire Gate-All-Around CMOS Devices: Impact of Diameter, Channel-Orientation and Low Temperature on Device Performance

S.C. Rustagi, N. Balasubramanian, N. Singh, 2006, 2006 International Electron Devices Meeting.