S. Vijayaraghavan

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Suman Datta, Mantu K. Hudait, Dmitri Lubyshev, 2012 .

In situ grown Ge in an arsenic-free environment for GaAs/Ge/GaAs heterostructures on off-oriented (100) GaAs substrates using molecular beam epitaxy

M. Hudait, Yan Zhu, N. Jain, 2012 .

Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

J. Fastenau, D. Lubyshev, M. Hudait, 2012 .