H. Oh

发表

Study on Thermal Stability of Plasma- PH3 Passivated HfAlO / In0.53Ga0.47As Gate Stack for Advanced Metal-Oxide-Semiconductor Field Effect Transistor

A. Du, C. Ng, S. A. Suleiman, 2010 .

Interface Engineering for InGaAs n-MOSFET Application Using Plasma PH3 – N2 Passivation

Sungjoo Lee, S. A. Suleiman, H. Oh, 2010 .

Energy-band alignments of HfO2 on p-GaAs substrates

G. Dalapati, D. Chi, Sungjoo Lee, 2008 .

Thermally robust phosphorous nitride interface passivation for InGaAs self-aligned gate-first n-MOSFET integrated with high-k dielectric

G. Lo, D. Kwong, D. Chi, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

D. Ko, S. Kim, H. Oh, 2020, Molecules.

NF3/NH3 Dry Cleaning Mechanism Inspired by Chemical and Physical Surface Modification of Si, SiO2, and Si3N4

Sung Yong Kang, D. Ko, H. Oh, 2014 .

Investigation of oxide layer removal mechanism using reactive gases

D. Ko, Jin-Goo Park, H. Oh, 2015 .

Integration of GaAs epitaxial layer to si-based substrate using Ge condensation and low-temperature migration enhanced epitaxy techniques

W. Loh, S. Chua, B. Cho, 2007 .

Inversion-Mode Self-Aligned $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor With HfAlO Gate Dielectric and TaN Metal Gate

G. Lo, D. Kwong, D. Chi, 2008, IEEE Electron Device Letters.

Strained Si/SiGe Channel With Buried $\hbox{Si}_{0.99}\hbox{C}_{0.01}$ for Improved Drivability, Gate Stack Integrity and Noise Performance

G. Lo, W. Loh, B. Cho, 2007, IEEE Transactions on Electron Devices.

Mechanochemical Synthesis of ZnMn 2 O 4 and its Electrochemical Properties as an Anode Material for Lithium-ion Batteries

Yoon-Soo Park, H. Oh, Sung-man Lee, 2011 .

Plasma PH3-passivated high mobility inversion InGaAs MOSFET fabricated with self-aligned gate-first process and HfO2/TaN gate stack

G. Lo, Jianqiang Lin, Sungjoo Lee, 2008, 2008 IEEE International Electron Devices Meeting.