Linqiang Xu

Gigahertz integrated circuits based on carbon nanotube films

Lin Xu, Li Ding, Jia Si, 2018 .

Radiofrequency transistors based on aligned carbon nanotube arrays

Lianmao Peng, Zhiyong Zhang, Donglai Zhong, 2021, Nature Electronics.

Gate-tunable interfacial properties of in-plane ML MX2 1T′–2H heterojunctions

Jing Lu, R. Quhe, Yangyang Wang, 2018 .

Schottky barrier heights in two-dimensional field-effect transistors: from theory to experiment

Zhiyong Zhang, Jing Lu, R. Quhe, 2021, Reports on progress in physics. Physical Society.

Ultrahigh Capacity of Monolayer Dumbbell C4N as a Promising Anode Material for Lithium-Ion Battery

Jing Lu, R. Quhe, Han Zhang, 2020 .

Pervasive Ohmic Contacts in Bilayer Bi2O2Se–Metal Interfaces

Jing Lu, Jinbo Yang, Lianqiang Xu, 2019, The Journal of Physical Chemistry C.

Performance Limit of Ultrathin GaAs Transistors.

R. Quhe, Jinbo Yang, Qiuhui Li, 2022, ACS applied materials & interfaces.

Bilayer Tellurene: A Potential p‐Type Channel Material for Sub‐10 nm Transistors

Zhiyong Zhang, Jing Lu, R. Quhe, 2021, Advanced Theory and Simulations.

Can Carbon Nanotube Transistors Be Scaled Down to the Sub-5 nm Gate Length?

Zhiyong Zhang, Chenguang Qiu, Weijun Zhou, 2021, ACS applied materials & interfaces.

Sub-5 nm Gate Length Monolayer MoTe2 Transistors

Xiaotian Sun, Qiuhui Li, Jie Yang, 2021, The Journal of Physical Chemistry C.

Enhancement‐Mode Field‐Effect Transistors and High‐Speed Integrated Circuits Based on Aligned Carbon Nanotube Films

Lianmao Peng, Zhiyong Zhang, Jie Han, 2021, Advanced Functional Materials.

Two-dimensional materials as a stabilized interphase for the solid-state electrolyte Li10GeP2S12 in lithium metal batteries

Jing Lu, R. Quhe, Xiaotian Sun, 2021 .

Ballistic two-dimensional InSe transistors

L. Peng, Chenguang Qiu, Linqiang Xu, 2023, Nature.

Performance Limit of Gate-All-Around Si Nanowire Field-Effect Transistors: An Ab Initio Quantum Transport Simulation

Jinbo Yang, Qiuhui Li, Jie Yang, 2022, Physical Review Applied.

Excellent Device Performance of Sub‐5‐nm Monolayer Tellurene Transistors

Zhiyong Zhang, Jing Lu, R. Quhe, 2019, Advanced Electronic Materials.

Unusual Fermi‐Level Pinning and Ohmic Contact at Monolayer Bi2O2Se–Metal Interface

Zhiyong Zhang, Jing Lu, Jinbo Yang, 2019, Advanced Theory and Simulations.

Sub 10 nm Bilayer Bi2O2Se Transistors

Zhiyong Zhang, Jing Lu, R. Quhe, 2019, Advanced Electronic Materials.

Layer-Dependent Giant Magnetoresistance in Two-Dimensional CrPS4 Magnetic Tunnel Junctions

R. Quhe, Jinbo Yang, Xiaotian Sun, 2021, Physical Review Applied.

Gigahertz integrated circuits based on carbon nanotube films

Zhiyong Zhang, L. Peng, Chenguang Qiu, 2017, Nature Electronics.

Monolayer Honeycomb Borophene: A Promising Anode Material with a Record Capacity for Lithium-Ion and Sodium-Ion Batteries

E. Kaxiras, G. Tritsaris, Jinbo Yang, 2020 .

Scaling aligned carbon nanotube transistors to a sub-10 nm node

Zhiyong Zhang, C. Jin, L. Peng, 2023, Nature Electronics.

First-principles simulation of monolayer hydrogen passivated Bi2O2S2-metal interfaces.

Jing Lu, Lianqiang Xu, Xiaotian Sun, 2020, Physical chemistry chemical physics : PCCP.

Planar Direction‐Dependent Interfacial Properties in Monolayer In2Se3–Metal Contacts

Zhiyong Zhang, Jinbo Yang, Xiaotian Sun, 2019, physica status solidi (b).

First-principles simulation of monolayer hydrogen passivated Bi2O2S2metal interfaces

Jing Lu, Lianqiang Xu, Xiaotian Sun, 2020 .

Negative capacitance tunneling field effect transistors based on monolayer arsenene, antimonene, and bismuthene

Zhiyong Zhang, Jing Lu, Hong Li, 2019, Semiconductor Science and Technology.

Sub-5 nm Gate-All-Around InP Nanowire Transistors Towards High-Performance Devices

Y. Ang, Jing Lu, R. Quhe, 2023, 2308.14045.

Monolithic three‐dimensional integration of aligned carbon nanotube transistors for high‐performance integrated circuits

Zhiyong Zhang, C. Jin, L. Peng, 2023, InfoMat.

Sub-5 nm Monolayer MoS2 Transistors toward Low-Power Devices

Zhiyong Zhang, Junfeng Yan, Zhiyong Zhang, 2021 .

Device Performance and Strain Effect of Sub-5 nm Monolayer InP Transistors

Jie Yang, R. Quhe, Jinbo Yang, 2022, Journal of Materials Chemistry C.

Monolayer GaS with high ion mobility and capacity as a promising anode battery material

F. Pan, Jiaxin Zheng, Jinbo Yang, 2019, Journal of Materials Chemistry A.

Towards Sustainable Ultrawide Bandgap Van der

Y. Ang, H. Yang, S. Liang, 2023 .