C. Wu

发表

Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

S. Datta, R. Loo, D. Antoniadis, 2017, IEEE Transactions on Electron Devices.

Optical Studies of GaAs Nanowires Grown on Trenched Si(001) Substrate by Cathodoluminescence

C. Wann, Y. Su, C. Ko, 2012 .

Well width dependence for novel AlInAsSb/InGaAs double-barrier resonant tunneling diode

S. Chang, Y. Su, Hsin-Chuan Wang, 2002 .

Device characteristics of GaAs-based heterojunction bipolar transistors using an InGaAs/GaAsP strain-compensated layer as a base material

S. Chang, Y. Su, H. Hsu, 2004 .

InAlP-Capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate

Y. Yeo, Qian Zhou, C. Ko, 2014, 2014 IEEE International Electron Devices Meeting.

Thermal annealing effect on the photoluminescence properties of unstrained GaInAsSb/InP single quantum well grown by MOVPE

Y. Su, C. Wu, Jia-Rong Chang, 2004 .

Reduction in Turn-on Voltage in GaInNAs and InGaAs-Based Double-Heterojunction Bipolar Transistors

S. Chang, Y. Su, C. Wu, 2004 .

High performance Ge CMOS with novel InAlP-passivated channels for future sub-10 nm technology node applications

Y. Yeo, W. Wang, B. Liu, 2013, 2013 IEEE International Electron Devices Meeting.

Improvement of defect reduction in semi-polar GaN grown on shallow-trenched Si(001) substrate

C. Wann, Y. Su, C. Ko, 2012 .