A. Kean

发表

The Analysis of Coatings Produced by Accelerated Nanoparticles

A. Kean, L. Allers, 2006 .

Very sensitive two-photon absorption GaAs/AlGaAs waveguide detector for an autocorrelator

J. Marsh, A. Kean, F. Laughton, 1992 .

Carrier transit delays in nanometer-scale GaAs MESFET's

C. Wilkinson, I. Thayne, C. Stanley, 1993, IEEE Electron Device Letters.

The Effect of Growth Temperature and Substrate Misorientation on Degree of Order and Antiphase Domain Size in Ga 0.52 In 0.48 P Epilayers Grown on GaAs (001) Substrates by Gs-Mbe

S. Najda, A. Kean, G. Duggan, 1998 .

The Effect of Growth Temperature on Atomic Ordering in Ga o.5 2 In o.48 P Epilayers Grown on GaAs (001) Substrates by GS-MBE

M. Dawson, S. Najda, A. Kean, 1996 .

True-CW operation of GaAs bistable etalon with electronic optical nonlinearity

Andrew C. Walker, C. R. Stanley, D. J. Goodwill, 1992 .

Temperature dependence of the band gap of zinc nitride observed in photoluminescence measurements

J. Heffernan, I. Farrer, A. Kean, 2017 .

Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2

J. M. Chamberlain, M. Holland, C. Stanley, 1991 .

Peak electron mobilities between 2.75 and 3.32×105 cm2 V−1 s−1 in GaAs grown by molecular beam epitaxy with As2

M. Holland, C. Stanley, A. Kean, 1990 .

Silicon compensation and scattering mechanisms in two-dimensional electron gases on (110)GaAs

M. Holland, C. Stanley, A. Kean, 1995 .

Band structure parameters of quaternary phosphide semiconductor alloys investigated by magneto-optical spectroscopy

J. Heffernan, S. Bland, J. Davies, 2000 .

Gallium desorption from (Al,Ga)As grown by molecular beam epitaxy at high temperatures

M. Holland, C. Stanley, J. Chapman, 1991 .

Measurement of aluminum concentration in epitaxial layers of AlxGa1−xAs on GaAs by double axis x‐ray diffractometry

C. Stanley, B. Tanner, A. Turnbull, 1991 .

Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source

C. T. Foxon, M. Dawson, S. Hooper, 1995 .

Ultrafast all-optical switching in Al/sub 0.18/Ga/sub 0.82/As directional coupler in 1.55 mu m spectral region

J. S. Aitchison, George I. Stegeman, Charles N. Ironside, 1991 .

Uniform and efficient GaAs/AlGaAs quantum dots

M. Dawson, A. Kean, G. Duggan, 1995 .

Far-infrared optically detected cyclotron resonance in GaAs layers and low-dimensional structures

C. Stanley, C. Pidgeon, I. Agool, 1992 .

Far-infrared optically detected cyclotron resonance observation of quantum effects in GaAs

G. R. Johnson, C. Stanley, C. Pidgeon, 1990 .

Band gap and mass renormalisation in GaInP/AlGaInP quantum wells

R. Nicholas, S. Najda, A. Kean, 1998 .

Magneto-optical studies of compressively strained GaInPAlGaInP multiple quantum wells

M. Dawson, R. Nicholas, S. Najda, 1996 .

Structural, electrical, and optical characterization of as grown and oxidized zinc nitride thin films

I. Farrer, A. Kean, J. Sharman, 2016 .

Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells

M. Stroscio, K. W. Kim, G. Iafrate, 1992 .

Selective reactive ion etching of GaAs/AlGaAs metal‐semiconductor field effect transistors

S. P. Beaumont, Iain G. Thayne, Martin Holland, 1991 .

Electrical properties of silicon and beryllium doped (AlyGa1−y)0.52In0.48P

S. Najda, A. Kean, G. Duggan, 1997 .

Optical measurements of electronic bandstructure in AlGaInP alloys grown by gas source molecular beam epitaxy

Martin D. Dawson, S. P. Najda, M. Dawson, 1995 .

Growth of (Al,Ga)As structures on (110)-GaAs by MBE

M. Holland, C. Stanley, A. Kean, 1993 .

Quantum-well laser with integrated passive waveguide fabricated by neutral impurity disordering

J. Marsh, M. Holland, J.H. Marsh, 1992, IEEE Photonics Technology Letters.

Suppression of bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps

John H. Marsh, C. C. Button, J. Beauvais, 1992 .

Forming-free resistive switching memories based on titanium-oxide nanoparticles fabricated at room temperature

Pascal Normand, Dimitris Tsoukalas, A. H. Kean, 2013 .

Resistive switching memory using titanium-oxide nanoparticle films

Pascal Normand, Dimitris Tsoukalas, Nikos Boukos, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

The Effect of the Buffer Layer on the Structure, Mobility and Photoluminescence of MBE grown GaN

C. Humphreys, Nikhil Sharma, V. Keast, 2000 .

Raman Scattering and Photoluminescence of GaAs-Based Nanostructures

C. Stanley, S. Thoms, S. Beaumont, 1990 .

Investigation of a novel AlZnN semiconductor alloy

P. Fry, J. Heffernan, I. Farrer, 2020, Materials Letters: X.

An investigation of CH4/H2 reactive ion etching damage to thin heavily doped GaAs metal–semiconductor field effect transistor layers during gate recessing

C. Wilkinson, C. Stanley, N. Cameron, 1990 .

Fabrication and high frequency characterisation of GaAs MESFETs with gate lengths down to 30 nm

C. Wilkinson, I. Thayne, C. Stanley, 1990 .

Improved ambient stability of thermally annealed zinc nitride thin films

I. Farrer, A. Kean, J. Sharman, 2020, AIP Advances.