Kang Zhang

发表

The piezotronic effect in InGaN/GaN quantum-well based microwire for ultrasensitive strain sensor

Xingfu Wang, M. He, Baoyu Wang, 2020 .

Influence of the Quality of AlN Buffer Layer on the Quality of GaN Epitaxial Layer on Silicon Substrate

Kang Zhang, Taiping Lu, Shu Ti Li, 2011 .

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Zhong Lin Wang, Xingfu Wang, Shuti Li, 2021, Nano-micro letters.

Centimeter-long III-Nitride nanowires and continuous-wave pumped lasing enabled by graphically epitaxial lift-off

Xingfu Wang, Shuti Li, Baoyu Wang, 2020 .

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Kang Zhang, Longfei He, Qiao Wang, 2021, Crystals.

Fast growth of crack-free thick AlN film on sputtered AlN/sapphire by introducing high-density nano-voids

Junze Li, Chuanyu Jia, Kang Zhang, 2020, Journal of Physics D: Applied Physics.

High-Quality AlN Film Grown on Sputtered AlN/Sapphire via Growth-Mode Modification

Kang Zhang, Longfei He, Ningyang Liu, 2018, Crystal Growth & Design.

Efficient carrier transport for 368 nm ultraviolet LEDs with a p-AlInGaN/AlGaN short-period superlattice electron blocking layer

Shuti Li, Kang Zhang, Longfei He, 2021 .

Marked enhancement in the efficiency of deep ultraviolet light-emitting diodes by using a AlxGa1-xN carrier reservoir layer

Shuti Li, Kang Zhang, Longfei He, 2019, Applied Physics Express.

Epitaxtial lift-off for freestanding InGaN/GaN membranes and vertical blue light-emitting-diodes

Xingfu Wang, Baoyu Wang, Kang Zhang, 2020 .

Quasi-vertical GaN heterojunction diodes with p-NiO anodes deposited by sputtering and post-annealing

Baijun Zhang, Liuan Li, Kang Zhang, 2020 .

High quality N-polar GaN films grown with varied V/III ratios by metal–organic vapor phase epitaxy

Xiaoming Ge, Junjun Wang, Kang Zhang, 2020, RSC advances.

Effect of V/III ratio on the surface morphologies of N-polar GaN films grown on offcut sapphire substrates

Zilan Li, Kang Zhang, Qiao Wang, 2020 .

Enhanced performance of AlGaN-based ultraviolet light-emitting diodes with linearly graded AlGaN inserting layer in electron blocking layer

Weidong Song, Kang Zhang, Longfei He, 2019, Chinese Physics B.

Ultralow Dark-Current and Superhigh Detectivity Ultraviolet Photodetector Based on Freestanding GaN Nanobelt Array

Xingfu Wang, Shuti Li, Kang Zhang, 2022, ACS Applied Electronic Materials.

Effect of the thickness of undoped GaN interlayers between multiple quantum wells and the p-doped layer on the performance of GaN light-emitting diodes.

Shuti Li, Chao Liu, Guowei Xiao, 2011, Optics express.

Low-Defect-Density Aluminum Nitride (AlN) Thin Films Realized by Zigzag Macrostep-Induced Dislocation Redirection

Junze Li, Chuanyu Jia, Kang Zhang, 2021 .

Enhanced Transfer Efficiency of Plasmonic Hot-electron across Au/GaN interface by the Piezo-Phototronic Effect

Xingfu Wang, Shuti Li, Kang Zhang, 2021, Nano Energy.

Ultraviolet Lasing Using Individual GaN Nanobelts

Chunxiang Xu, Xingfu Wang, Ru Wang, 2023, ACS Applied Nano Materials.

Coaxial semipolar InGaN/GaN microwire array LED with substantially suppressed efficiency droop

Shuti Li, Weidong Song, Yiming Sun, 2020 .

Interfacial engineering for semi-insulating GaN/sapphire template with low dislocation density

Kang Zhang, Longfei He, Qiao Wang, 2022, Journal of Alloys and Compounds.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

Kang Zhang, Longfei He, Ningyang Liu, 2017, ACS applied materials & interfaces.

Introducing an n-type electron deceleration layer to enhance the luminous efficiency of AlGaN-based DUV-LEDs

Kang Zhang, Qiao Wang, Hualong Wu, 2023, Frontiers in Physics.

Modulating Carrier Distribution for Efficient AlGaN-Based Deep Ultraviolet Light-Emitting Diodes by Introducing an Asymmetric Quantum Well

M. He, Kang Zhang, Longfei He, 2021, Journal of Electronic Materials.

Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers

Shuti Li, Chao Liu, Guowei Xiao, 2012 .

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

Yugang Zhou, Chao Liu, Guowei Xiao, 2012 .

Blue InGaN Light-emitting Diodes with Dip-shaped Quantum Wells

Yugang Zhou, Chao Liu, Shuwen Zheng, 2011 .

The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

Shuti Li, Chao Liu, Guowei Xiao, 2011 .

Performance enhancement of AlGaN-based 365 nm ultraviolet light-emitting diodes with a band-engineering last quantum barrier.

Shuti Li, Weidong Song, Kang Zhang, 2018, Optics Letters.

The electronic and mechanical properties of two dimensional multilayered GaN: A first-principles study

Kang Zhang, Qiao Wang, Chenguang He, 2023, Materials Today Communications.