Viral N. Barhate

Temperature-dependent study of slow traps generation mechanism in HfO2/GeON/Ge(1 1 0) metal oxide semiconductor devices

J. Yi, Younjung Lee, K. Agrawal, 2020 .

Plasma-enhanced atomic layer-deposited La2O3 ultra-thin films on Si and 6H–SiC: a comparative study

L. S. Patil, K. Agrawal, Viral N. Barhate, 2020, Applied Physics A.

Post-deposition-annealed lanthanum-doped cerium oxide thin films: structural and electrical properties

K. Agrawal, Viral N. Barhate, A. Mahajan, 2020, Rare Metals.

The effect of post-deposition annealing on the chemical, structural and electrical properties of Al/ZrO2/La2O3/ZrO2/Al high-k nanolaminated MIM capacitors

K. Agrawal, Viral N. Barhate, A. Mahajan, 2022, Journal of Materials Science: Materials in Electronics.

XPS study of homemade plasma enhanced atomic layer deposited La2O3/ZrO2 bilayer thin films

K. Agrawal, Viral N. Barhate, A. Mahajan, 2019, Semiconductor Science and Technology.

Performance enhancement of Al/La2O3/ZrO2/4H–SiC MOS device with LaON as interfacial passivation layer

K. Agrawal, Viral N. Barhate, A. Mahajan, 2020 .

Spectroscopic study of La2O3 thin films deposited by indigenously developed plasma-enhanced atomic layer deposition system

K. Agrawal, Viral N. Barhate, A. Mahajan, 2018, International Journal of Modern Physics B.

Improvement in Electrical Properties of A1/La2O3/ZrO2/ Gate Stack Deposited on LaON Passivated GaAs Substrate

K. Agrawal, Viral N. Barhate, A. Mahajan, 2020, 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).