Y. Fu

The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

P. Hurley, I. Thayne, S. Monaghan, 2017 .

P.116: Light Extraction Improvement of Flexible Top‐Emitting Organic Light‐Emitting Devices by Using Nanoimprinted Periodically Corrugated Polycarbonate Substrate

P. Wei, Fang‐Chung Chen, M. Tsai, 2013 .

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

K. Elgaid, M. Uren, I. Thayne, 2020, AIP Advances.

Energy-band parameter of atomic layer deposited Al2O3 & sulphur passivated molecular beam epitaxially grown (110) In0.53Ga0.47As surfaces

P. Hurley, I. Thayne, S. Monaghan, 2015, 2015 11th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME).

Characteristics of In0.7Ga0.3As MOS Capacitors Obtained using Hydrochloric Acid Treatment, Ammonium Sulfide Passivation, Methanol Treatment, and Forming Gas Annealing

Yao-Jen Lee, T. Chao, Y. Fu, 2019, ECS Journal of Solid State Science and Technology.