Jun Wu

Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

Erik Lind, Lars-Erik Wernersson, Karl-Magnus Persson, 2013, IEEE Transactions on Electron Devices.

RF Characterization of Vertical Wrap-Gated InAs/High- $\kappa $ Nanowire Capacitors

E. Lind, L. Wernersson, K. Jansson, 2016, IEEE Transactions on Electron Devices.

The Dependence of the Performance of Strained NMOSFETs on Channel Width

M. Liang, T. Lee, L. Yeh, 2009, IEEE Transactions on Electron Devices.

Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates

E. Lind, L. Wernersson, R. Timm, 2012 .

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

J. Svensson, E. Lind, L. Wernersson, 2017, Nano letters.

3-D Integrated Track-and-Hold Circuit Using InAs Nanowire MOSFETs and Capacitors

L. Wernersson, Jun Wu, 2016, IEEE Electron Device Letters.

${L}_{{g}} = {30}$ nm InAs Channel MOSFETs Exhibiting ${f}_{\textit {max}} ={410}$ GHz and ${f}_{{t}} = {357}$ GHz

M. Rodwell, Jun Wu, B. Markman, 2018, IEEE Electron Device Letters.

Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si.

J. Svensson, E. Lind, L. Wernersson, 2017, Nano letters.