S. Cui

发表

Study of gate oxide traps in HfO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

Kuei-Shu Chang-Liao, Tomas Palacios, Omair I. Saadat, 2013 .

AC Transconductance Dispersion (ACGD): A Method to Profile Oxide Traps in MOSFETs Without Body Contact

C. Merckling, D. Lin, A. Alian, 2012, IEEE Electron Device Letters.

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

T. Ma, S. Rajan, S. Krishnamoorthy, 2013 .

Effect of hydrogen on the chemical bonding and band structure at the Al2O3/In0.53Ga0.47As interface

T. Ma, Zuoguang Liu, M. Eizenberg, 2011 .

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

T. Ma, Jae-Hoon Lee, Jung-Hee Lee, 2016 .

Inelastic electron tunneling spectroscopy study of ultrathin Al2O3–TiO2 dielectric stack on Si

T. Ma, Ming-Feng Chang, Zuoguang Liu, 2010 .

The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

T. Ma, H. Koser, H. Köser, 2010, 2010 IEEE International Memory Workshop.

Ga2O3(Gd2O3)∕Si3N4 dual-layer gate dielectric for InGaAs enhancement mode metal-oxide-semiconductor field-effect transistor with channel inversion

J. Kwo, T. Ma, M. Hong, 2007 .

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

Siddharth Rajan, Ting-Hsiang Hung, T. P. Ma, 2013 .

Inelastic Electron Tunneling Spectroscopy Study of Thin Gate Dielectrics

T. Ma, Zuoguang Liu, C. Ahn, 2010, Advanced materials.

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Tomas Palacios, Omair I. Saadat, T. P. Ma, 2013, IEEE Transactions on Nuclear Science.

Total Ionizing Dose Radiation Effects in Al 2 O $_{3}$ -Gated Ultra-Thin Body In $_{0.7}$ Ga $_{0.3}$ As MOSFETs

E. Zhang, T. Ma, D. Fleetwood, 2013 .

Effect of H on interface properties of Al2O3/In0.53Ga0.47As

T. Ma, Zuoguang Liu, M. Eizenberg, 2011 .