D. Skarlatos

发表

Molecular/Nanostructured Functional Metal Oxide Stacks for Nanoscale Nanosecond Information Storage

N. Boukos, N. Glezos, N. Vouroutzis, 2019, Advanced Functional Materials.

Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

C. Tsamis, D. Tsoukalas, D. Skarlatos, 2003 .

The effect of oxygen source on atomic layer deposited Al2O3 as blocking oxide in metal/aluminum oxide/nitride/oxide/silicon memory capacitors

K. Kukli, M. Ritala, M. Leskelä, 2013 .

Effects of annealing conditions on charge storage of Si nanocrystal memory devices obtained by low-energy ion beam synthesis

N. Cherkashin, A. Claverie, M. Carrada, 2003 .

Inert ambient annealing effect on MANOS capacitor memory characteristics

K. Kukli, M. Ritala, M. Leskelä, 2015, Nanotechnology.

Nitrogen distribution during oxidation of low and medium energy nitrogen-implanted silicon

M. Perego, S. Ferrari, M. Fanciulli, 2004 .

Point defect injection during nitrous oxidation of silicon at low temperatures

A. Claverie, D. Tsoukalas, D. Skarlatos, 2000 .

Gallium Implantation and Diffusion in Crystalline Germanium

C. Tsamis, C. Krontiras, S. Georga, 2010 .

Degradation of Pt-Al2O3-Ge Metal Oxide Semiconductor Structures due to Pt-Al2O3 Induced Reactions

K. Mergia, V. Ioannou-Sougleridis, N. Vouroutzis, 2020 .

Annealing Behavior of Locally Confined Dislocation Loops Under Inert And Oxidizing Ambient

C. Tsamis, A. Claverie, F. Cristiano, 2002 .

Structural and electrical properties of silicon dioxide layers with embedded germanium nanocrystals grown by molecular beam epitaxy

N. Cherkashin, A. Larsen, J. L. Hansen, 2003 .

Substrate damage in ion-implanted (100) germanium after extended ms flash lamp annealing: Origins and suppression

V. Ioannou-Sougleridis, N. Vouroutzis, J. Stoemenos, 2021 .

Nitrogen Implantation and Diffusion in Crystalline Germanium: Implantation Energy, Temperature and Ge Surface Protection Dependence

D. Giubertoni, M. Bersani, V. Ioannou-Sougleridis, 2012 .

ZrO2 and Al2O3 Thin Films on Ge(100) Grown by ALD: An XPS Investigation

L. Sygellou, S. Ladas, C. Krontiras, 2011 .

Implantation and diffusion of phosphorous in germanium

C. Tsamis, D. Mcphail, A. Chroneos, 2006 .

Phosphorous Diffusion in N2+-Implanted Germanium during Flash Lamp Annealing: Influence of Nitrogen on Ge Substrate Damage and Capping Layer Engineering

B. Colombeau, C. Thomidis, G. Pepponi, 2017 .

Processing issues in Silicon nanocrystal manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Panagiotis Dimitrakis, Pascal Normand, A. Agarwal, 2004 .

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

M. Perego, M. Fanciulli, N. Cherkashin, 2004 .

Atomic layer deposited zirconium oxide electron injection layer for efficient organic light emitting diodes

M. Vasilopoulou, S. Ladas, C. Krontiras, 2013 .

Influence of the annealing ambient on the relative thermal stability of dislocation loops in silicon

A. Claverie, F. Cristiano, B. Colombeau, 2001 .

Germanium substrate loss during low temperature annealing and its influence on ion-implanted phosphorous dose loss

David S. McPhail, Christos Tsamis, Stavroula N. Georga, 2008 .

Modeling of low energy-high dose arsenic diffusion in silicon in the presence of clustering-induced interstitial generation

C. Tsamis, D. Skarlatos, 2007 .

Interstitial injection in silicon after high-dose, low-energy arsenic implantation and annealing

C. Tsamis, A. Claverie, G. Benassayag, 2005 .

Silicon nanocrystal memory devices obtained by ultra-low-energy ion-beam synthesis

M. Perego, M. Fanciulli, A. Claverie, 2004 .

Electrochemical evaluation of barrier layers for photoelectrochromic devices

G. Leftheriotis, D. Skarlatos, Alexandros Dokouzis, 2023, Electrochimica Acta.

Strong Diffusion Suppression of Low Energy–Implanted Phosphorous in Germanium by N2 Co-Implantation

B. Colombeau, C. Thomidis, M. Bersani, 2015 .

MOS memory structures by very-low-energy-implanted Si in thin SiO2

Panagiotis Dimitrakis, Pascal Normand, Dimitris Tsoukalas, 2003 .

Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers

C. Tsamis, P. Komninou, M. Seacrist, 2009 .