S. Chu

发表

IN SITU FABRICATED GA2O3-GAAS STRUCTURES WITH LOW INTERFACE RECOMBINATION VELOCITY

M. Passlack, Minghwei Hong, J. P. Mannaerts, 1995 .

Vertical‐cavity surface‐emitting lasers with semitransparent metallic mirrors and high quantum efficiencies

R. F. Kopf, Li-Wei Tu, Minghwei Hong, 1990 .

Enhanced functionality in GaN and SiC devices by using novel processing

S. J. Pearton, C. Abernathy, J. Zavada, 2003, International Semiconductor Device Research Symposium, 2003.

Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C.

N. Theodoropoulou, C. Abernathy, M. Overberg, 2002, Physical review letters.

Mid-IR interband cascade light emitting diodes based on type-II quantum wells

F. Ren, S. Pei, R.Q. Yang, 1996, Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.

AlGaN/GaN HEMTs grown by molecular beam epitaxy on sapphire, SiC, and HVPE GaN templates

D. Lang, K. West, R. Molnar, 2002, Proceedings. IEEE Lester Eastman Conference on High Performance Devices.

Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors

C. Abernathy, R. Wilson, A. Hebard, 2004 .

Ga2O3 films for electronic and optoelectronic applications

W. S. Hobson, M. Passlack, Minghwei Hong, 1995 .

Noncascaded intersubband injection lasers at λ≈7.7 μm

F. Capasso, A. Cho, D. Sivco, 1998 .

OPTICS 2901 Quantum cascade laser: Temperature dependence of the performance characteristics and high T0 operation

Stephen R. Forrest, Koji Tominaga, Carlo Sirtori, 1994 .

Recent results in quantum cascade lasers and intersubband transitions in GaN/AlGaN multiple quantum wells

H. Hwang, A. Cho, D. Sivco, 2002 .

Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers

Claire F. Gmachl, Alfred Y. Cho, A. Cho, 2000 .

Resonant optical nonlinearities from intersubband transitions in GaN/AlN quantum wells

Claire F. Gmachl, Ronen Rapaport, Oleg Mitrofanov, 2003 .

Terahertz electroluminescence from superlattice quantum cascade structures

K. West, L. Pfeiffer, F. Capasso, 2002 .

Recent Progress in GaN‐Based Superlattices for Near‐Infrared Intersubband Transitions

A. Cho, J. Hsu, C. Gmachl, 2002 .

Surface plasmon quantum cascade lasers at λ∼19 μm

Federico Capasso, Claire F. Gmachl, Deborah L. Sivco, 2000 .

Comparison of F2 plasma chemistries for deep etching of SiC

K. Lee, S. Chu, F. Ren, 2001 .

Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE

P. Wisk, F. Ren, S. Pearton, 1992 .

Ga 2 O 3 (Gd 2 O 3 )/InGaAs enhancement-mode n-channel MOSFETs

J. Kwo, Jenshan Lin, F. Ren, 1998 .

p-Ohmic contact resistance for GaAs(C)/GaN(Mg)

C. R. Abernathy, F. Ren, S. Pearton, 2000 .

Quantum cascade laser: a unipolar intersubband semiconductor laser

J. Faist, C. Sirtori, F. Capasso, 1994, Proceedings of IEEE 14th International Semiconductor Laser Conference.

Self-aligned process for emitter- and base-regrowth GaN HBTs and BJTs

F. Ren, S. Pearton, J. Lee, 2001 .

Growth and characterization of continuously graded index separate confinement heterostructure (GRIN-SCH) InGaAs-InP long wavelength strained layer quantum-well lasers by metalorganic vapor phase epitaxy

N. Olsson, T. Tanbun-ek, K. Wecht, 1990 .

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Richard J. Molnar, Julia W. P. Hsu, Michael J. Manfra, 2001 .

Scanning Kelvin force microscopy imaging of surface potential variations near threading dislocations in GaN

Julia W. P. Hsu, J. Hsu, A. Sergent, 2002 .

Complex-coupled quantum cascade distributed-feedback laser

C. Gmachl, J. Faist, C. Sirtori, 1997, IEEE Photonics Technology Letters.

Alignment-relaxed 1.55 mu m multiquantum well lasers fabricated using standard buried heterostructure laser processes

Fow-Sen Choa, R. A. Logan, Won-Tien Tsang, 1995 .

Temperature dependence of GaN high breakdown voltage diode rectifiers

Stephen J. Pearton, R. G. Wilson, Jen-Inn Chyi, 2000 .

Demonstration of enhancement-mode p- and n-channel GaAs MOSFETS with Ga2O3(Gd2O3) As gate oxide

J. Kwo, F. Ren, J. Kuo, 1997 .

Quantum-well intersub-band electroluminescent diode at λ=5μm

J. Faist, C. Sirtori, F. Capasso, 1993 .

Improved CW operation of quantum cascade lasers with epitaxial-side heat-sinking

A. Tredicucci, C. Gmachl, F. Capasso, 1999, IEEE Photonics Technology Letters.

Continuous-wave and high-power pulsed operation of index-coupled distributed feedback quantum cascade laser at λ≈8.5 μm

Federico Capasso, Claire F. Gmachl, Jérôme Faist, 1998 .

Dislocation and morphology control during molecular-beam epitaxy of AlGaN/GaN heterostructures directly on sapphire substrates

K. West, L. Pfeiffer, M. Manfra, 2002 .

Epitaxial growth and self-organized superlattice structures in AlGaN films grown by plasma assisted molecular beam epitaxy

S. Chu, T. Moustakas, K. Ludwig, 2001 .

Injectorless quantum-cascade lasers

Federico Capasso, Claire F. Gmachl, Deborah L. Sivco, 2001 .

TOPICAL REVIEW: GaN-based diodes and transistors for chemical, gas, biological and pressure sensing

Jenshan Lin, S. J. Pearton, Brent P. Gila, 2004 .

Continuous wave operation of midinfrared (7.4–8.6 μm) quantum cascade lasers up to 110 K temperature

Carlo Sirtori, Federico Capasso, Jérôme Faist, 1996 .

Small and large signal performance and gain-switching of intra-cavity contacted, shallow implant apertured VCSELs

D. Kilper, F. Ren, S. Pearton, 2001 .

The effect of built-in electric field in GaN/AlGaN quantum wells with high AIN mole fraction

Alfred Y. Cho, R. Harel, R. Harel, 2001 .

Ferromagnetic and Structural Properties of Mn-Implanted p-GaN

S. Pearton, N. Theodoropoulou, C. Abernathy, 2001 .