W. Feng

发表

Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ∼ Impact of charge-centroid in the channel due to quantum effect on 1/f noise ∼

K. Kakushima, H. Iwai, K. Ohmori, 2011, 2011 International Electron Devices Meeting.

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Hiroshi Iwai, Kuniyuki Kakushima, Soshi Sato, 2012 .

Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes

H. Akinaga, H. Shima, K. Ohmori, 2016, Scientific Reports.

Impact of Nitrogen Incorporation on Low-Frequency Noise of Polycrystalline Silicon/TiN/HfO2/SiO2 Gate-Stack Metal--Oxide--Semiconductor Field-Effect Transistors

K. Shiraishi, K. Ohmori, Keisaku Yamada, 2011 .

Suppression of kink phenomenon in ultra-high-speed strained InAs- inserted E-mode HEMTs with a new 0.1 /spl mu/m Y-shaped Pt-buried gate and their impacts on device performance

Daehyun Kim, K. Seo, Tae-Woo Kim, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

High f/sub T/ 0.05/spl mu/m In/sub 0.52/AlAs/In/sub 0.53/GaAs HEMT's with strained 5 nm InAs sub-channel on InP substrate

W. Feng, Jaehak Lee, Xiaogang Xie, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Impact of Random Telegraph Noise Profiles on Drain-Current Fluctuation During Dynamic Gate Bias

Wei Feng, Kenji Ohmori, Keisaku Yamada, 2014, IEEE Electron Device Letters.

Direct real-time observation of channel potential fluctuation correlated to random telegraph noise of drain current using nanowire MOSFETs with four-probe terminals

H. Iwai, M. Sato, K. Yamada, 2011, 2011 Symposium on VLSI Technology - Digest of Technical Papers.

Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

H. Iwai, K. Yamada, K. Kakushima, 2011 .

Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz

K. Yamada, K. Ohmori, R. Hasunuma, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Behavior of Low-Frequency Noise in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors for Different Impurity Concentrations

K. Ohmori, W. Feng, R. Hettiarachchi, 2011 .

Comparison of dynamic fluctuation in drain current with static variability using N-MOSFETs with poly-Si/SiO2 gate stack structures

K. Yamada, K. Ohmori, W. Feng, 2011, 2011 21st International Conference on Noise and Fluctuations.