D. Fritzsche

InP--SiO 2 m.i.s. structure with reduced interface state density near conduction band

D. Fritzsche, 1978 .

Fast response InP/InGaAsP heterojunction phototransistors

D. Fritzsche, E. Kuphal, R. Aulbach, 1981 .

Nonalloyed ohmic contacts for p/sup +/-type in GaAs base layer in HBTs

P. Ressel, D. Fritzsche, K. Vogel, 1992 .

Zn-implanted Pd-based ohmic contacts to p-In/sub 0.53/Ga/sub 0.47/As for the base layer of InP/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistors

G. Lenk, J. Wurfl, P. Ressel, 1995, Seventh International Conference on Indium Phosphide and Related Materials.

Secondary ion mass spectroscopy study of Zn or Cd implanted and rapid thermally annealed Pd/Ge contacts to p‐In0.53Ga0.47As

P. Ressel, D. Fritzsche, M. Trapp, 1994 .

Lpe growth of high purity InP and N- and P-In0.53Ga0.47As

D. Fritzsche, E. Kuphal, 1983 .

InP based HBTs-technology, performance and applications

D. Fritzsche, E. Kuphal, F. Fiedler, 1992, LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.