A. Jóźwikowska

发表

The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

M. Suligowski, M. Nietopiel, A. Jóźwikowska, 2016, 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

The Numerical–Experimental Enhanced Analysis of HOT MCT Barrier Infrared Detectors

A. Rogalski, P. Martyniuk, M. Kopytko, 2017, Journal of Electronic Materials.

Enhanced numerical design of two-barrier infrared detectors with III–V compounds heterostructures considering the influence of lattice strain and misfit dislocations on the band gap

M. Suligowski, A. Jóźwikowska, K. Jóźwikowski, 2019, Optical and Quantum Electronics.

Enhanced numerical modelling of non-cooled long-wavelength multi-junction (Cd, Hg)Te photodiodes : Device modelling for circuits, components and systems

J. Piotrowski, W. Gawron, A. Jóźwikowska, 2003 .

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

M. Nietopiel, A. Jóźwikowska, K. Jóźwikowski, 2017 .

Dislocations as a Noise Source in LWIR HgCdTe Photodiodes

A. Jóźwikowska, K. Jóźwikowski, A. Martyniuk, 2016, Journal of Electronic Materials.

The numerical method for solving the transport equations in HgCdTe heterostructures using the nonequilibrium distribution functions

M. Nietopiel, A. Jóźwikowska, K. Jóźwikowski, 2016, 2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD).

Numerical modeling of fluctuation phenomena in semiconductors and detailed noise study of mid-wave infrared HgCdTe-heterostructure devices

A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, 2002 .

Numerical analysis of fluctuation phenomena in HOT HgCdTe barrier detectors

L. Faraone, J. Antoszewski, M. Kopytko, 2014, 2014 Conference on Optoelectronic and Microelectronic Materials & Devices.

Numerical analysis of longwavelength extracted photodiodes

J. Piotrowski, A. Jóźwikowska, K. Jóźwikowski, 1993 .

A detailed theoretical and experimental noise study in n-on-p Hg0.68Cd0.32Te photodiodes

C. Musca, L. Faraone, A. Jóźwikowska, 2004 .

Generation-recombination effects on dark currents in CdTe-passivated midwave infrared HgCdTe photodiodes

Z. Orman, Jarek Antoszewski, Lorenzo Faraone, 2005 .

Performance of mercury cadmium telluride photoconductive detectors

A. Rogalski, Krzysztof Jozwikowski, A. Rogalski, 1991 .

Enhanced numerical analysis of current-voltage characteristics of long wavelength infrared n-on-p HgCdTe photodiodes

Małgorzata Kopytko, Antoni Rogalski, K. Jóźwikowski, 2010 .

Numerical solution of the nonlinear Poisson equation for semiconductor devices by application of a diffusion-equation finite difference scheme

A. Jóźwikowska, 2008 .

Numerical estimation of lattice strain, bending and generation of misfit dislocations in CdHgTe heterostructures grown on GaAs substrate

A. Jóźwikowska, K. Jóźwikowski, O. Markowska, 2020, Optical and Quantum Electronics.

Generation-recombination effects in high temperature HgCdTe heterostructure photodiodes

A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, 2004 .

Performance of p+−n HgCdTe photodiodes

A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, 1992 .

Near-room temperature MWIR HgCdTe photodiodes limited by vacancies and dislocations related to Shockley–Read–Hall centres

A. Rogalski, M. Kopytko, J. Piotrowski, 2011 .

The influence of shallow donor and acceptor states on carriers' lifetime in long wavelength HgCdTe infrared detectors

A. Jóźwikowska, K. Jóźwikowski, 2021 .

High frequency response of near-room temperature LWIR HgCdTe heterostructure photodiodes

Małgorzata Kopytko, Antoni Rogalski, K. Jóźwikowski, 2010 .

Simplified model of dislocations as a SRH recombination channel in the HgCdTe heterostructures

Małgorzata Kopytko, L. R. Jaroszewicz, Antoni Rogalski, 2012 .

Photoelectromagnetic effect in CdxHg1−xTe graded-gap structures

J. Piotrowski, A. Jóźwikowska, K. Jóźwikowski, 1984 .

Performance of p+-n HgCdTe photodiodes

A. Rogalski, A. Jóźwikowska, K. Jóźwikowski, 1993 .

The method for calculation of carrier concentration in narrow-gap n-type doped Hg1−xCdxTe structures

M. Suligowski, M. Nietopiel, A. Jóźwikowska, 2017, Optical and Quantum Electronics.

Isotype heterojunction in HgCdTe photodiodes

Jaroslaw Rutkowski, Alina Jozwikowska, A. Jóźwikowska, 1997, Other Conferences.

Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes

A. Rogalski, M. Kopytko, J. Pawluczyk, 2009 .

The numerical method for solving the transport equations in HgCdTe heterostructures using the non-equilibrium distribution functions

M. Nietopiel, A. Jóźwikowska, K. Jóźwikowski, 2017, Optical and Quantum Electronics.