Hiroaki Tanaka

发表

Low-temperature large-grain poly-Si direct deposition by microwave plasma enhanced chemical vapor deposition using SiH4/Xe

T. Ohmi, W. Shindo, S. Sakai, 1999 .

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2009 .

Impact of Tungsten Capping Layer on Yttrium Silicide for Low-Resistance n+-Source/Drain Contacts

T. Ohmi, S. Sugawa, A. Teramoto, 2008 .

Analysis of the Low-Frequency Noise Reduction in Si(100) Metal–Oxide–Semiconductor Field-Effect Transistors

Tadahiro Ohmi, Rihito Kuroda, Shigetoshi Sugawa, 2011 .

Low Contact Resistivity with Low Silicide/p+-Silicon Schottky Barrier for High-Performance p-Channel Metal–Oxide–Silicon Field Effect Transistors

T. Ohmi, S. Sugawa, A. Teramoto, 2010 .

Formation and Property of Yttrium and Yttrium Silicide Films as Low Schottcky Barrier material for n-Type Silicon

Tadahiro Ohmi, Shigetoshi Sugawa, Tetsuya Goto, 2008 .

Effect of power density on the structure properties of microcrystalline silicon film prepared by high-density low-ion-energy microwave plasma

T. Ohmi, S. Sugawa, Hiroaki Tanaka, 2005 .

High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma

Yukio Hayakawa, Tadahiro Ohmi, Shigetoshi Sugawa, 2003 .

Electrical properties of 100 nm pitch Cr/Au fine electrodes with 40 nm width on GaInAs toward hot electron interference/diffraction devices

Y. Miyamoto, K. Furuya, H. Hongo, 1997 .

Electrical Properties of 100 nm Pitch Cr/Au Fine Electrodes with 40 nm Width on GaInAs.

Y. Miyamoto, K. Furuya, H. Hongo, 1996 .

Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

T. Ohmi, S. Sugawa, Hiroaki Tanaka, 2005 .