Soshi Sato

Advantages of Silicon Nanowire Metal–Oxide–Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Hiroshi Iwai, Kuniyuki Kakushima, Soshi Sato, 2012 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

H. Iwai, N. Sugii, K. Tachi, 2008 .

Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors

T. Endoh, K. Yamabe, M. Kitabatake, 2014 .

Advantages of Silicon Nanowire MOSFETs over Planar Ones Investigated from the Viewpoints of Static and Noise Properties

H. Iwai, K. Yamada, K. Kakushima, 2011 .

Formation mechanism of concave by dielectric breakdown on silicon carbide metal-oxide-semiconductor capacitor

Tetsuo Endoh, Masaaki Niwa, Soshi Sato, 2016, Microelectron. Reliab..