M. Schnee

发表

LaLuO3 as a high-k gate dielectric for InAs nanowire structures

T. Schäpers, J. Schubert, C. Volk, 2010 .

LaScO 3 as a higher-κ dielectric for p-MOSFETs

K. Bourdelle, S. Mantl, A. Nichau, 2011 .

LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process

S. Mantl, L. Knoll, A. Nichau, 2012 .

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

S. Mantl, L. Knoll, A. Nichau, 2011, Ulis 2011 Ultimate Integration on Silicon.

Enhancement-Mode LaLuO3–AlGaN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors Using Fluorine Plasma Ion Implantation

Kevin J. Chen, Qing-Tai Zhao, Sen Huang, 2013 .

AlGaN/GaN MISHEMTs With High-κ

Kevin J. Chen, Hongwei Chen, Qing-Tai Zhao, 2012 .

AlGaN/GaN MISHEMTs With High-$\kappa \ \hbox{LaLuO}_{3}$ Gate Dielectric

Hongwei Chen, Qing-Tai Zhao, J. Schubert, 2012, IEEE Electron Device Letters.

Effective attenuation length for Lanthanum Lutetium oxide between 7 and 13 keV

S. Mantl, A. Nichau, J. Schubert, 2013 .

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface.

B. Holländer, S. Mantl, A. Nichau, 2013, The Journal of chemical physics.

Independent and coherent transitions between antiferromagnetic states of few-molecule systems

Cambridge, Spain, Milan, 2021, 2107.07723.

Extraction of the neutron magnetic form factor from quasielastic ³He-vector(e-vector,e{sup '}) at Q²=0.1-0.6 (GeV/c)²

S. Incerti, B. Anderson, J. Watson, 2006 .

Transverse asymmetry AT' from the quasielastic 3He(e,e') process and the neutron magnetic form factor.

G. Corrado, S. Incerti, E. Hughes, 2000, Physical review letters.

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

S. Mantl, Qing-Tai Zhao, A. Nichau, 2011 .

Extraction of the neutron magnetic form factor from quasielastic 3 (cid:1) He( (cid:1) e , e ) at

G. Corrado, S. Incerti, M. Viviani, 2007 .

Fabrication and Characterization of Enhancement-Mode High- $\kappa~{\rm LaLuO}_{3}$-AlGaN/GaN MIS-HEMTs

Shu Yang, Kevin J. Chen, Sen Huang, 2013, IEEE Transactions on Electron Devices.

Characterization of high-κ LaLuO3 thin film grown on AlGaN/GaN heterostructure by molecular beam deposition

Kevin J. Chen, Hongwei Chen, Qing-Tai Zhao, 2011 .

Precision measurement of the spin-dependent asymmetry in the threshold region of 3He(e, e').

G. Corrado, S. Incerti, E. Hughes, 2001, Physical review letters.

Polymorphous GdScO3 as high permittivity dielectric

S. Mantl, G. Bihlmayer, A. Besmehn, 2015 .

1 Monitoring transitions between antiferromagnetic states of individual molecules

J. Maultzsch, P. Kögerler, C. Schneider, 2021 .

Quantum transport in carbon nanotubes covalently functionalized with magnetic molecules

P. Kögerler, C. Besson, M. Schnee, 2016 .

Independent and coherent transitions between antiferromagnetic states of few-molecule systems

Cambridge, Milan, Technische Universitat Berlin, 2021, 2107.07723.

Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

K. Bourdelle, S. Mantl, A. Nichau, 2011, IEEE Electron Device Letters.

Atomic layer deposition of HfO2 and Al2O3 layers on 300 mm Si wafers for gate stack technology

B. Holländer, S. Mantl, J. Schubert, 2011 .