T. Fullowan

发表

10 Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators

P. Wisk, F. Ren, S. Pearton, 1991 .

Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation

F. Ren, S. Pearton, C. Abernathy, 2002 .

10-Gbit/s transmission using an integrated electroabsorption-modulator/DFB laser grown by selective-area epitaxy

R. D. Yadvish, A. M. Sergent, T. Tanbun-ek, 1995 .

Iodine-Based dry Etching Chemistries for InP and Related Compounds

W. S. Hobson, F. Ren, S. Pearton, 1992 .

Highly Reliable WGe Ohmic Contact to GaAs-AlGaAs HBTs

F. Ren, S. Pearton, C. Abernathy, 1992 .

Improvement of Ohmie Contacts on GaAs with In-Situ Cleaning

W. S. Hobson, F. Ren, S. Pearton, 1991 .

Improvement of ohmic contacts on GaAs with in situ cleaning

F. Ren, S. Pearton, J. Brown, 1991 .

Improvedn-type GaAs ohmic contacts compatible with a chlorine-based dry-etch process

W. S. Hobson, F. Ren, S. Pearton, 1991 .

Reactive ion etching of GaAs with CCl2F2:O2: Etch rates, surface chemistry, and residual damage

Nancy M. Haegel, Stephen J. Pearton, M. J. Vasile, 1989 .

High‐rate, anisotropic dry etching of InP in HI‐based discharges

F. Ren, S. Pearton, U. Chakrabarti, 1992 .

III-V semiconductor device dry etching using ECR discharges

F. Ren, S. Pearton, R. Kopf, 1992 .

Temperature dependence of reactive ion etching of GaAs with CCl2F2:O2

S. Pearton, K. Short, Kevin S. Jones, 1989 .

Ohmic contacts ton-type In0.5Ga0.5P

F. Ren, S. Pearton, J. Kuo, 1992 .

Use of pt gate metallization to reduce gate leakage current in GaAs MESFETs

W. S. Hobson, F. Ren, S. Pearton, 1991 .

In-based p ohmic contacts to the base layer of AlGaAs/GaAs heterojunction bipolar transistor

W. S. Hobson, F. Ren, S. Pearton, 1991 .

In-Based Ohmic Contacts to the Base Layer of GaAs-AlGaAs Heterojunction Bipolar Transistors

W. S. Hobson, F. Ren, S. Pearton, 1990 .

Growth of GaAs/AlGaAs HBTs by MOMBE (CBE)

P. Wisk, F. Ren, S. Pearton, 1992 .

Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges

W. S. Hobson, F. Ren, S. Pearton, 1993 .

Damage introduction in InP and InGaAs during Ar and H2 plasma exposure

W. S. Hobson, F. Ren, S. Pearton, 1992 .

Applications of ion implantation in III–V device technology

W. S. Hobson, F. Ren, S. Pearton, 1993 .

Long-term stability at 200 degrees C of implant-isolated GaAs

P. Wisk, F. Ren, S. Pearton, 1993 .

Reliability of Implant-Isolation Regions in Highly-Doped GaAs-Based Structures

F. Ren, S. Pearton, C. Abernathy, 1993 .

Ion Implantation Technology For III-V Heterojunction Devices

W. S. Hobson, P. Wisk, F. Ren, 1993 .

Stability of InAs contact layers on GaAs/AlGaAs heterojunction bipolar transistors during implant isolation annealing

F. Ren, S. Pearton, C. Abernathy, 1992 .

Rapid isothermal processing for fabrication of GaAs-based electronic devices (HBTs)

W. S. Hobson, F. Ren, S. Pearton, 1992 .

Self-aligned, metal-masked dry etch processing of III–V electronic and photonic devices

F. Ren, S. Pearton, C. Abernathy, 1992 .

Self-Aligned, Metal-Masked Dry Etch Processing of III-V Electronic and Photonic Devices

F. Ren, S. Pearton, C. Abernathy, 1992 .

Self-aligned InGaP/GaAs heterojunction bipolar transistors for microwave power application

R. S. Brozovich, P. Wisk, Y. Chen, 1993, IEEE Electron Device Letters.

Small area InGaP emitter/carbon doped GaAs base HBTs grown by MOMBE

P. Wisk, F. Ren, S. Pearton, 1992 .

Carbon and tin doped npn and pnp AlGaAs/GaAs HBTs grown by MOMBE

P. Wisk, F. Ren, S. Pearton, 1991 .

Carbon doping of III–V compounds grown by MOMBE

A. S. Jordan, F. Ren, S. Pearton, 1990 .

GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE

A. S. Jordan, F. Ren, S. Pearton, 1990 .

Growth and dry etch processing of MOMBE GaAs p-n junctions

F. Ren, S. Pearton, C. Abernathy, 1991 .

Selfaligned AlGaAs/GaAs HBT grown by MOMBE

F. Ren, S. Pearton, E. Laskowski, 1991 .

The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors

J. P. Kreskovsky, H. Grubin, F. Ren, 1993 .

Anisotropic dry etching of submicron W features using a Ti mask

F. Ren, S. Pearton, R. Kostelak, 1992 .

Plasma etching of III-V semiconductor thin films

Stephen J. Pearton, W. S. Hobson, C. R. Abernathy, 1992 .

Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors

M. Feuer, R. Malik, L. Lunardi, 1990 .

Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors

P. Wisk, F. Ren, S. Pearton, 1991 .

Growth of Pnp heterojunction bipolar transistor structures by metalorganic molecular beam epitaxy

P. Wisk, F. Ren, S. Pearton, 1992 .

Characteristics of Be+ and O+ or H+ co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures

P. Wisk, F. Ren, S. Pearton, 1991 .

AlGaAs/GaAs HBTs grown on InP by organometallic vapour phase epitaxy

F. Ren, S. Pearton, Young-Kai Chen, 1992 .

Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors

P. Wisk, F. Ren, S. Pearton, 1992 .

Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures

F. Ren, S. Pearton, A. Yanof, 1990 .

GaAs MESFETs, ring oscillators and divide-by-2 integrated circuits fabricated on MBE grown GaAs on Si substrates

N. J. Shah, M. Feuer, F. Ren, 1988 .

Dispersion penalty free transmission over 130 km standard fiber using a 1.55 /spl mu/m, 10 Gb/s integrated EA/DFB laser with low extinction ratio and negative chirp

L. D. Tzeng, P. Sciortino, W. Tsang, 1996, Proceedings of European Conference on Optical Communication.

Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-μm, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp

O. Mizuhara, L. D. Tzeng, Y.K. Park, 1996, IEEE Photonics Technology Letters.

Damage introduction in GaAs/AlGaAs and InGaAs/InP heterojunction bipolar transistor structures during electron cyclotron resonance plasma processing

F. Ren, S. Pearton, C. Abernathy, 1993 .

Dry processed, through‐wafer via holes for GaAs power devices

F. Ren, S. Pearton, J. Lothian, 1993 .

Dry etch processing of GaAs/AlGaAs high electron mobility transistor structures

F. Ren, S. Pearton, S. Pei, 1991 .

Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing

F. Ren, S. Pearton, C. Abernathy, 1992 .

Single‐energy, MeV implant isolation of multilayer III‐V device structures

F. Ren, S. Pearton, R. Kopf, 1992 .