B. Lin

A 1- mu m MODFET process yielding MUX and DMUX circuits operating at 4.5 Gb/s

C. Stout, Chris Kocot, B. McFarland, 1988, 10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988..

Anisotropy in weakly localized electronic transport: A parameter-free test of the scaling theory of localization

D. Tsui, R. Dynes, D. Bishop, 1984 .

Subthreshold current in MODFETs of tenth-micrometer gate

D. Tsui, H. Lee, A. Lepore, 1990, IEEE Electron Device Letters.

Mobility of the two‐dimensional electron gas in GaAs‐AlxGa1−xAs heterostructures

A. Gossard, D. Tsui, M. Paalanen, 1984 .

Mobility transition in the two-dimensional electron gas in GaAsAlGaAs heterostructures

D. Tsui, G. Weimann, B. Lin, 1985 .

Experimental and theoretical studies of the 2deg mobility in modulation-doped GaAs/Al1−xGaxAs heterostructures

D. Tsui, B. Lin, 1986 .

A backside via process for thermal resistance improvement demonstrated using GaAs HBTs

A. Armstrong, R. Van Tuyl, R. Van Tuyl, 1992, GaAs IC Symposium Technical Digest 1992.

Anomalies in MODFET's with a low-temperature buffer

C. Kocot, D. Mars, R. Jaeger, 1990 .

Weak localization of two-dimensional electrons in GaAs-Al x Ga 1-x As heterostructures

A. Gossard, D. Tsui, M. Paalanen, 1984 .

Anomalous nanosecond transient component in a GaAs MODFET technology

C. Kocot, H. Rohdin, R. Kaneshiro, 1988, IEEE Electron Device Letters.