Eiji Kuwahara

发表

Fabrication of ambipolar field-effect transistor device with heterostructure of C60 and pentacene

A. Fujiwara, Y. Kubozono, Eiji Kuwahara, 2004 .

Electronic properties for the C2v and Cs isomers of Pr@C82 studied by Raman, resistivity and scanning tunneling microscopy/spectroscopy

S. Fujiki, A. Fujiwara, H. Kitagawa, 2004 .

Metallic phase in the metal-intercalated higher fullerene Rb8.8(7)C84

S. Okada, S. Nagase, T. Takenobu, 2005 .

Fabrication of field-effect transistor device with higher fullerene, C88

H. Kusai, Y. Kubozono, Eiji Kuwahara, 2005 .

Fabrication and characterization of field-effect transistor device with C2v isomer of Pr@C82

A. Fujiwara, T. Takayanagi, Y. Kubozono, 2005 .

Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

A. Fujiwara, T. Takayanagi, Y. Kubozono, 2005 .

Fabrication of a logic gate circuit based on ambipolar field-effect transistors with thin films of C60 and pentacene

T. Takayanagi, H. Kusai, Y. Kubozono, 2005 .