S. A. Stockman

发表

GaN-based tunnel junction in optical devices

Scott W. Corzine, Richard P. Schneider, T. Takeuchi, 2002, SPIE OPTO.

GaN-Based Light Emitting Diodes with Tunnel Junctions

S. A. Stockman, C. Kocot, S. Corzine, 2001 .

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

S. A. Stockman, Paul S. Martin, Jonathan J. Wierer, 2003 .

1.4 EFFICIENCY IMPROVEMENT IN TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P LIGHT-EMITTING DIODES WITH THIN (<2000 A) ACTIVE REGIONS

S. A. Stockman, T. S. Tan, C. Kocot, 1999 .

High-power AlGaInN flip-chip light-emitting diodes

Michael R. Krames, S. A. Stockman, Paul S. Martin, 2001 .

High Power LEDs – Technology Status and Market Applications

Michael R. Krames, Lou W. Cook, S. A. Stockman, 2002 .

High‐Power III‐Nitride Emitters for Solid‐State Lighting

S. A. Stockman, Paul S. Martin, Gerd O. Mueller, 2002 .

Performance of high-power AlInGaN light emitting diodes

S. A. Stockman, Paul S. Martin, Nathan F. Gardner, 2001 .

Chapter 1 Visible Light-Emitting Diodes

S. A. Stockman, F. Kish, M. Craford, 1999 .

Current Dependence of In-Plane Electroluminescence Distribution of InxGa1-xN/GaN Multiple Quantum Well Light Emitting Diodes

S. A. Stockman, A. Kim, H. Itoh, 2003 .

Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes

S. A. Stockman, Paul S. Martin, Jonathan J. Wierer, 2003, SPIE OPTO.