Ç. Güçlü

The evaluation of the current–voltage and capacitance–voltage-frequency measurements of Yb/p-Si Schottky diodes with a high zero-bias barrier height

H. E. Lapa, Ç. Güçlü, D. A. Aldemir, 2020, Applied Physics A.

Frequency and Voltage-Dependent Dielectric Properties and AC Electrical Conductivity of (Au/Ti)/Al 2 O 3 =n-GaAs with Thin Al 2 O 3 Interfacial Layer at Room Temperature

S. Altindal, Ç. Güçlü, A. Özdemir, 2016 .

Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs)

Ç. Güçlü, A. Özdemir, A. Kökçe, 2019, Materials Science in Semiconductor Processing.

The reverse bias current–voltage–temperature (I–V–T) characteristics of the (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs) in temperature range of 80–380 K

Ç. Güçlü, D. A. Aldemir, A. Özdemir, 2021, Journal of Materials Science: Materials in Electronics.

A Comparison Electronic Specifications of the MS & MPS type Schottky Diodes (SDs) via Utilizing Voltage-Current (V-I) Characteristics

Ç. Güçlü, 2023, Gazi university journal of science part a:engineering and innovation.

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Ç. Güçlü, A. Özdemir, Ş. Altındal, 2016 .

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Ç. Güçlü, A. Özdemir, Ş. Altındal, 2016, Applied Physics A.