D. Elton

Broadband operation of InGaAsP-InGaAs GRIN-SC-MQW BH amplifiers with 115 mW output power

D. M. Cooper, L. Westbrook, P. C. Spurdens, 1990 .

Properties of facet-coated 1.3 mu m InGaAsP/InP MQW lasers

D. M. Cooper, G. Sherlock, C. P. Seltzer, 1991, [Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.

1.3 μm MQW semiconductor optical amplifiers with high gain and output power

D. M. Cooper, M. Robertson, G. Sherlock, 1991 .

Temperature dependent operation of 1.5 /μm GaInAsP/InP VCSELs

A. J. Dann, M. Adams, N. Balkan, 2002 .

Novel 1.55-µm multielectrode DFB source for coherent transmission systems

W. B. Hale, W. J. Duncan, I. Henning, 1990 .

242 nm continuous tuning from a GRIN-SC-MQW-BH InGaAsP laser in an extended cavity

W. J. Devlin, R. Wyatt, D. M. Cooper, 1990 .

High-power 1.5 mu m all-MOVPE buried heterostructure graded index separate confinement multiple quantum well lasers

D. M. Cooper, M. Aylett, C. P. Seltzer, 1989 .