Guo Xing Duan

Electrical Stress and Total Ionizing Dose Effects on ${\hbox {MoS}}_{2}$ Transistors

Bin Wang, En Xia Zhang, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.

Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs

Dimitri Linten, Jerome Mitard, Liesbeth Witters, 2015, IEEE Transactions on Device and Materials Reliability.

Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices

Bin Wang, Sarah J. Haigh, En Xia Zhang, 2014, IEEE Transactions on Nuclear Science.

Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe ${p}$ MOSFETs

Dimitri Linten, Jerome Mitard, Liesbeth Witters, 2016, IEEE Transactions on Device and Materials Reliability.

Bias Dependence of Total Ionizing Dose Effects in SiGe-MOS FinFETs

En Xia Zhang, Gennadi Bersuker, Ronald D. Schrimpf, 2014, IEEE Transactions on Nuclear Science.