B. Kim

Modeling reactive ion etching of silicon dioxide films using neural networks

Gary S. May, B. Kim, B. Kim, 1994, 1994 Proceedings. 44th Electronic Components and Technology Conference.

Reactive ion etch modeling using neural networks and simulated annealing

Gary S. May, G. May, B. Kim, 1996 .

Use of neural network to characterize a low pressure temperature effect on refractive property of silicon nitride film deposited by PECVD

B. Kim, Wan-Shick Hong, 2004, IEEE Transactions on Plasma Science.

A comparison of statistically-based and neural network models of plasma etch behavior

Gary S. May, C. D. Himmel, G. May, 1992, [1992 Proceedings] IEEE/SEMI International Semiconductor Manufacturing Science Symposium.