U.I. Chung

Highly reliable 50nm-thick PZT capacitor and low voltage FRAM device using Ir/SrRuO/sub 3//MOCVD PZT capacitor technology

S.O. Park, S.H. Kim, S.O. Park, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Highly manufacturable sub-100 nm DRAM integrated with full functionality

J.K. Cho, J.J. Lee, S. Choi, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

A Highly Reliable Cu Interconnect Technology for Memory Device

U.I. Chung, G.H. Choi, H. Park, 2007, 2007 IEEE International Interconnect Technology Conferencee.